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IRF4905SPBF
+StücklisteMOSFET P-CH 55V 42A D2PAK
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HerstellerInfineon-Technologien
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Herstellerteil #IRF4905SPBF
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Datenblatt IRF4905SPBF DataSheet
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Paket TO-252
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 42A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 20mOhm @ 42A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3500 pF @ 25 V |
| Power Dissipation (Max) | 170W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
Übersicht
Description
- Voltage & Current Ratings: -55V drain-source voltage (VDS), -74A continuous drain current (ID).
- Low On-Resistance: 20mΩ (max) at VGS = -10V, reducing conduction losses.
- Fast Switching: Optimized for applications like motor control, DC-DC converters, and power management.
- Package: TO-263 (D2PAK), offering robust thermal performance.
- Applications: Used in battery protection, load switches, and synchronous rectification.
Its P-channel design simplifies drive circuitry in high-side configurations. Always refer to the datasheet for precise specifications and thermal considerations.
Equivalent
- IRF4905 (same specs, different package)
- IRF4905PbF (lead-free version)
- STP80PF55 (STMicroelectronics, -55V, -80A, 16mΩ)
- FQP47P06 (Fairchild/ON Semi, -60V, -47A, 50mΩ)
- SUP75P06-08 (Vishay, -60V, -75A, 8mΩ)
Check datasheets for exact compatibility in your circuit.
Features
- Voltage Rating: -55V (Drain-to-Source, VDSS)
- Current Rating: -74A (Continuous Drain Current, ID)
- Low On-Resistance: 20mΩ (RDS(on)) at VGS = -10V
- Fast Switching: Suitable for high-efficiency power applications
- Avalanche Energy Rated: Enhances ruggedness in inductive loads
- Logic-Level Gate Drive: Compatible with -10V gate drive (VGS)
- Package: TO-220AB (Through-Hole Mounting)
- Applications: Power supplies, motor control, DC-DC converters
This MOSFET is designed for high-power, low-loss switching in P-channel configurations.
Pinout
1. Gate (G) – Controls the MOSFET's switching.
2. Drain (D) – Connected to the load (high-side switch).
3. Source (S) – Typically tied to the supply voltage.
Key Features:
- -55V drain-source voltage (VDS).
- -74A continuous drain current (ID).
- Low RDS(on) (0.02Ω max at VGS = -10V).
- Used in power switching, motor control, and DC-DC converters.
Compact and efficient for high-current applications.