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IRF7425TRPBF
+StücklisteMOSFET P-CH 20V 15A 8SO
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HerstellerInfineon-Technologien
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Herstellerteil #IRF7425TRPBF
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Datenblatt IRF7425TRPBF DataSheet
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Paket SOIC-8
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Auf Lager4696
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 15A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 8.2mOhm @ 15A, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 130 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 7980 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
Übersicht
Description
Key features of the IRF7425TRPBF include a high continuous drain current, low on-resistance, and fast switching capabilities. It is typically housed in an advanced surface-mount package known as the D2PAK, which provides effective thermal performance and space-saving benefits for compact device designs. Additionally, the IRF7425TRPBF is lead-free and RoHS-compliant, aligning with environmental regulations.
Overall, the IRF7425TRPBF is valued for its reliability, efficiency, and performance in managing high-power applications, making it a popular choice among engineers and designers in the electronics industry.
Equivalent
1. Vishay's Si7465DP
2. Fairchild's FDS6679AZ
3. ON Semiconductor's NTD5867NL
4. Infineon's BSC050N03LS
These alternatives have comparable voltage ratings and current capacities, but always check the datasheets to confirm compatibility with your specific application.
Features
1. N-Channel MOSFET: It is an N-channel device, suitable for high-side switching.
2. Voltage and Current Ratings: The device typically handles a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of 79A under specified conditions.
3. Low On-Resistance: It features a low R_DS(on) of approximately 7.5 mΩ, minimizing power loss and enhancing efficiency.
4. Fast Switching: Designed for fast switching speeds, which improves performance in switching applications.
5. Package Type: Available in a D2PAK surface-mount package, which is beneficial for thermal management and compact design.
6. Temperature Range: Operates reliably over a wide temperature range, suitable for demanding environments.
7. RoHS Compliant: It is lead-free and RoHS compliant, enhancing its environmental compatibility.
These features make the IRF7425TRPBF suitable for applications like DC-DC converters, motor control, and other high-speed switching applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET's conductivity. By applying a voltage to the gate, the MOSFET can be turned on or off, controlling the flow of current between the drain and source.
2. Drain (D): This pin is the terminal where the current flows out of the MOSFET when it is turned on. It is connected to the load in a circuit.
3. Source (S): This pin is the terminal where the current flows into the MOSFET. It is usually connected to the ground or the negative side of the power supply.
The IRF7425TRPBF is known for its low on-resistance and ability to handle significant current, making it suitable for high-efficiency power applications.
Manufacturer
Application
1. Power Management: Utilized in power supply circuits for efficient energy conversion and regulation.
2. Motor Control: Employed in controlling motors in automotive and industrial systems due to its high current handling.
3. DC-DC Converters: Used in DC-DC converter circuits for voltage regulation.
4. Switching Applications: Suitable for fast switching applications in power electronics.
5. Battery Management Systems: Assists in managing battery charging and discharging processes.
6. Inverters: Applied in inverter circuits for renewable energy systems, like solar inverters.
These applications leverage the MOSFET's low on-resistance and efficient thermal performance.