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IRF840
+StücklisteMOSFET N-CH 500V 8A TO220AB
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HerstellerSTMikroelektronik
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Herstellerteil #IRF840
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Paket TO-220-3
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Auf Lager2556
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Spezifikationen
| Attribut | Wert |
| Package | Tube |
| Series | PowerMESH™ II |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 850mOhm @ 3.5A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 39 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 832 pF @ 25 V |
| PowerDissipation(Max) | 125W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Übersicht
Equivalent
- IRF740 (400V, 10A, 0.55Ω)
- IRF830 (500V, 4.5A, 1.5Ω)
- STP8NK50Z (500V, 7.5A, 0.8Ω)
- FQP8N50C (500V, 8A, 0.85Ω)
- 2SK2837 (500V, 8A, 0.85Ω)
Check datasheets for exact compatibility in your circuit.
Features
- Voltage Rating: 500V drain-to-source (VDSS)
- Current Rating: 8A continuous drain current (ID)
- On-Resistance: 0.85Ω (RDS(on)) at 10V gate drive
- Fast Switching: Low gate charge (63nC) and fast switching speed
- Power Handling: Up to 125W power dissipation
- Gate Threshold: 4V typical (VGS(th))
- Package: TO-220 (through-hole) for easy mounting
Commonly used in power supplies, inverters, and motor control due to its high voltage and efficient switching performance.
