IRFB260NPBF

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IRFB260NPBF

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MOSFET N-CH 200V 56A TO220AB

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Spezifikationen

Attribut Wert
Package / Case Tube
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain(Id) @ 25°C 56A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 40mOhm @ 34A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 220 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 4220 pF @ 25 V
Power Dissipation (Max) 380W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Übersicht

Description

The IRFB260NPBF is an N-channel power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 200V
- Current Rating: 46A (pulsed up to 180A)
- Low On-Resistance (RDS(on)): 40mΩ (max at 10V VGS)
- Fast Switching: Optimized for minimal switching losses.
- Package: TO-220AB (through-hole), suitable for heat sinking.
Commonly used in:
- DC-DC converters
- Motor drives
- Power supplies
- Inverters
Its robust design and low conduction losses make it ideal for high-power applications requiring reliability and efficiency. Always refer to the datasheet for detailed specifications and thermal management guidelines.

Equivalent

Equivalent products to the IRFB260NPBF (N-channel MOSFET, 200V, 50A) include:
- IRFB260N (same series, minor variations)
- IRFB2607PBF (similar specs, different package)
- STP80NF55-06 (STMicroelectronics, 55V, 80A)
- FDPF33N25T (Fairchild, 250V, 33A)
- IXFH50N20P (IXYS, 200V, 50A)
Check datasheets for exact compatibility in your application.

Features

The IRFB260NPBF is an N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 0.028Ω (max at VGS = 10V)
- Fast Switching: Optimized for high-efficiency power applications
- Avalanche Rated: Robust against inductive load spikes
- Package: TO-220AB (through-hole, easy mounting)
- Gate Charge (Qg): 78nC (typical) for efficient drive
- Applications: DC-DC converters, motor drives, power supplies
This MOSFET is designed for high-current, low-loss switching in industrial and automotive systems.

Pinout

The IRFB260NPBF is a N-channel MOSFET with 3 pins (TO-220AB package):
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Connects to ground (low-voltage side).
Key Features:
- VDS: 200V
- ID: 46A (continuous)
- RDS(on): 40mΩ (max at 10V VGS)
- Fast switching for power applications (e.g., motor drives, inverters).
Concisely: 3-pin (G, D, S), 200V/46A MOSFET for high-power switching.

Application

The IRFB260NPBF, a power MOSFET, is commonly used in:
1. Switching Power Supplies – Efficient voltage conversion in AC/DC and DC/DC systems.
2. Motor Control – Drives for BLDC and brushed motors in industrial/automotive applications.
3. Solar Inverters – Converts DC to AC in renewable energy systems.
4. UPS Systems – Ensures stable power backup in critical infrastructure.
5. DC-DC Converters – Used in telecom and automotive power management.
Its low on-resistance and high current handling make it ideal for high-efficiency power switching.

Package

The IRFB260NPBF is a power MOSFET housed in a TO-262 (D2PAK) package. This package type is surface-mountable, offering good thermal performance and mechanical strength. It is commonly used in high-power applications like switching regulators and motor drives. The TO-262 is similar to the TO-220 but designed for surface mounting.

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