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IRFB4610PBF
+StücklisteMOSFET N-CH 100V 73A TO220AB
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HerstellerInfineon-Technologien
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Herstellerteil #IRFB4610PBF
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Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 73A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 14mOhm @ 44A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 140 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3550 pF @ 50 V |
| Power Dissipation (Max) | 190W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Übersicht
Description
IRFB4610PBF is an N‑channel, enhancement-mode power MOSFET from IR/Infineon.
- Class: 100 V, high‑current switching device for power electronics.
- Electricals (typical): Rds(on) around a few tens of mΩ (often ~8 mΩ at Vgs = 10 V); continuous current in the tens of amps range; rugged against inductive load energy. Gate threshold typically 2–4 V; full conduction at about 10 V gate drive.
- Features: fast switching, good avalanche ruggedness, Pb‑free (PBF suffix).
- Packaging: standard power package suitable for heatsinking (check exact package in datasheet).
- Applications: DC‑DC converters, motor drives, uninterruptible power supplies, solar inverters.
Note: exact values (Vds, Id, Rds(on), Qg, switching specs) vary by lot and package; always consult the manufacturer datasheet or distributor sheet for precise specifications and thermal recommendations.
- Class: 100 V, high‑current switching device for power electronics.
- Electricals (typical): Rds(on) around a few tens of mΩ (often ~8 mΩ at Vgs = 10 V); continuous current in the tens of amps range; rugged against inductive load energy. Gate threshold typically 2–4 V; full conduction at about 10 V gate drive.
- Features: fast switching, good avalanche ruggedness, Pb‑free (PBF suffix).
- Packaging: standard power package suitable for heatsinking (check exact package in datasheet).
- Applications: DC‑DC converters, motor drives, uninterruptible power supplies, solar inverters.
Note: exact values (Vds, Id, Rds(on), Qg, switching specs) vary by lot and package; always consult the manufacturer datasheet or distributor sheet for precise specifications and thermal recommendations.
Features
IRFB4610PBF is a high-current, high-voltage N-channel MOSFET (IR HEXFET). Key features:
- VDS: 100 V; ID: 46 A continuous
- RDS(on): ~9 mΩ (typ) at VGS = 10 V (max ≈ 12 mΩ)
- Gate threshold: ~2.0–4.0 V
- Low gate drive losses with reasonably low Qg/Qgs for fast switching
- Avalanche-rated and rugged for inductive-load protection
- Pb-free, RoHS compliant (PBF)
- High-temperature capability (TJ up to about 150–175°C)
- Robust body diode with good reverse-recovery behavior
- Available in Pb-free packaging variants (D2PAK/DPAK/TO-263 family options)
Note: For exact figures (tolerances, Qg, packaging, and recommended MCU drive conditions), consult the official datasheet.
- VDS: 100 V; ID: 46 A continuous
- RDS(on): ~9 mΩ (typ) at VGS = 10 V (max ≈ 12 mΩ)
- Gate threshold: ~2.0–4.0 V
- Low gate drive losses with reasonably low Qg/Qgs for fast switching
- Avalanche-rated and rugged for inductive-load protection
- Pb-free, RoHS compliant (PBF)
- High-temperature capability (TJ up to about 150–175°C)
- Robust body diode with good reverse-recovery behavior
- Available in Pb-free packaging variants (D2PAK/DPAK/TO-263 family options)
Note: For exact figures (tolerances, Qg, packaging, and recommended MCU drive conditions), consult the official datasheet.
Pinout
IRFB4610PBF is a 3-pin N-channel enhancement-mode power MOSFET. Pinout (pin 1 to 3): Gate, Drain, Source. The package tab is also connected to Drain.
Manufacturer
Manufacturer: Infineon Technologies AG (the IR brand International Rectifier was acquired by Infineon, and IRFB4610PBF is now an Infineon part).
What kind of company: A German multinational semiconductor manufacturer, one of the world’s leading producers of power semiconductors and system solutions for automotive, industrial, and security applications.
What kind of company: A German multinational semiconductor manufacturer, one of the world’s leading producers of power semiconductors and system solutions for automotive, industrial, and security applications.
Application
IRFB4610PBF is a 100 V, 46 A N‑channel Power MOSFET (Pb‑free, low Rds(on)). Suitable application areas include:
- Switch‑mode power supplies and DC‑DC converters (buck/boost/buck‑boost, point‑of‑load)
- Motor drives (BLDC, PMSM, DC motors) and motor‑control bridges
- Renewable energy interfaces (solar/wind inverters, grid‑tied stages)
- Uninterruptible power supplies and energy storage inverters
- High‑efficiency LED drivers and other offline/adapter power stages
- General high‑frequency switching in industrial control/on‑board power electronics
Use in either high‑ or low‑side switching configurations.
- Switch‑mode power supplies and DC‑DC converters (buck/boost/buck‑boost, point‑of‑load)
- Motor drives (BLDC, PMSM, DC motors) and motor‑control bridges
- Renewable energy interfaces (solar/wind inverters, grid‑tied stages)
- Uninterruptible power supplies and energy storage inverters
- High‑efficiency LED drivers and other offline/adapter power stages
- General high‑frequency switching in industrial control/on‑board power electronics
Use in either high‑ or low‑side switching configurations.
Package
TO-220AB style through-hole package (Pb-free).
