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IRFB52N15DPBF
+StücklisteMOSFET N-CH 150V 51A TO220AB
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HerstellerInfineon-Technologien
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Herstellerteil #IRFB52N15DPBF
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Datenblatt IRFB52N15DPBF DataSheet
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Paket TO-220-3
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Auf Lager4501
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Spezifikationen
| Attribut | Wert |
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 150 V |
| Current-ContinuousDrain(Id)@25°C | 51A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 32mOhm @ 36A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 89 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 2770 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 230W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
Übersicht
Description
Key specifications include:
- Drain-Source Voltage (Vds): 150V
- Continuous Drain Current (Id): 52A
- Rds(on): 0.028 Ohms, which indicates low on-state resistance for reduced power loss.
- Package: TO-220AB, a common package offering good thermal performance.
The IRFB52N15DPBF features fast switching speed, robust design, and high reliability, making it suitable for both industrial and consumer applications. It is lead-free and RoHS compliant, aligning with environmental regulations. The MOSFET’s efficiency and thermal performance make it a popular choice in modern electronic circuits requiring effective power management.
Equivalent
1. STMicroelectronics STL50N15F3
2. ON Semiconductor FDPF50N15
3. Vishay SiHP50N15E
Always verify compatibility by comparing the detailed specifications and datasheets to ensure they meet your application's requirements.
Features
1. N-Channel MOSFET: Suitable for high-speed switching applications.
2. VDSS (Drain-Source Voltage): 150V, allowing it to handle medium to high voltage applications.
3. RDS(on) (Drain-Source On-State Resistance): Low on-state resistance of around 0.044 ohms, which reduces power loss and increases efficiency.
4. ID (Continuous Drain Current): Approximately 52A, indicating the maximum current it can handle continuously without damage.
5. Technology: Based on advanced HEXFET® technology, providing improved switching speed and efficiency.
6. Package Type: TO-220AB, which offers good thermal performance with ease of mounting and heat dissipation.
7. Applications: Commonly used in power supply, motor control, and DC-DC conversion systems due to its fast switching speed and efficiency.
The IRFB52N15DPBF is RoHS compliant, ensuring it meets environmental and safety standards.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching operation. By applying a voltage to the gate, the device can be turned on or off.
2. Drain (D): This pin is connected to the main load circuit. Current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in most configurations.
The IRFB52N15DPBF is used in various applications such as power management, motor control, and DC-DC converters, where efficient and high-speed switching is required.
Manufacturer
Application
1. Switching Power Supplies: Used in converters and inverters for efficient power conversion.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. Uninterruptible Power Supplies (UPS): Helps in managing backup power systems.
4. Renewable Energy Systems: Used in solar inverters and wind turbine systems for energy conversion.
5. Battery Management Systems: Assists in charging and discharging control.
6. DC-DC Converters: Facilitates voltage regulation in electronic devices.
These applications benefit from the MOSFET's low on-state resistance and high-speed switching capabilities.