Abbildungen dienen nur als Referenz
IRFL024ZTRPBF
+StücklisteMOSFET N-CH 55V 5.1A SOT223
-
HerstellerInfineon-Technologien
-
Herstellerteil #IRFL024ZTRPBF
-
Datenblatt IRFL024ZTRPBF DataSheet
-
Paket SOT-223-4
-
Auf Lager4932
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 5.1A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 57.5mOhm @ 3.1A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 14 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 340 pF @ 25 V |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
Übersicht
Description
Key features include:
1. Low On-Resistance: This characteristic minimizes power losses, enhancing energy efficiency in circuits where the MOSFET is used as a switch or amplifier.
2. High-Speed Switching: The IRFL024ZTRPBF is designed to handle rapid changes in voltage and current, contributing to better performance in dynamic applications.
3. Rugged Design: It offers high reliability, with a design that withstands harsh operating conditions, including high temperatures and voltage spikes.
4. Versatility: Suitable for applications such as DC-DC converters, motor drives, and load switching, catering to both industrial and consumer electronics.
This MOSFET is a preferred choice for engineers focusing on efficient power management and robust electronic design.
Equivalent
1. NXP PSMN1R2-25YLDX
2. Vishay SI2325DS-T1-GE3
3. ON Semiconductor NTMFS5C604NL
4. STMicroelectronics STS4DNF60L
When selecting an equivalent, ensure that its voltage, current ratings, Rds(on), and package type match your application's requirements. Always consult the datasheets for precise specifications.
Features
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of 55V and a continuous drain current (I_D) of around 17.2A, making it suitable for medium-power applications.
2. R_DS(on): The on-resistance (R_DS(on)) is relatively low, often around 0.045 ohms, which ensures efficient current conduction with minimal power loss.
3. Package Type: This MOSFET is available in a surface-mount package, usually a TO-252 (DPAK), which aids in compact circuit design.
4. Thermal Characteristics: Good thermal performance helps in reliable operation under high current loads.
5. Fast Switching: The device is designed for fast switching speeds, suitable for applications requiring rapid on/off cycles.
6. Applications: Commonly used in power management, DC-DC converters, and motor control applications.
These features make the IRFL024ZTRPBF versatile and effective for a range of power electronic tasks. Always refer to the manufacturer's datasheet for detailed specifications and usage considerations.
Pinout
1. Gate (G): This is the control pin for the MOSFET. By applying a voltage to the gate, you control the flow of current between the drain and source.
2. Drain (D): This pin is where the current flows out from the MOSFET when it is in the 'on' state.
3. Source (S): This is the pin through which current enters the MOSFET.
In summary, the IRFL024ZTRPBF has 3 main functional pins: Gate, Drain, and Source, suitable for applications requiring efficient switching and amplification in electronic circuits.