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IRFP250MPBF

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MOSFET N-CH 200V 30A TO247AC

HerstellerInfineon-Technologien
Herstellerteil #IRFP250MPBF
Datenblatt IRFP250MPBF DataSheet
Paket TO-247
Auf Lager5331

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Spezifikationen

Attribut	Wert
Package	Tube
Series	HEXFET®
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	200 V
Current-ContinuousDrain(Id)@25°C	30A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	75mOhm @ 18A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	123 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	2159 pF @ 25 V
PowerDissipation(Max)	214W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-247AC

Übersicht

Description

The IRFP250MPBF is a N-channel power MOSFET from Infineon Technologies, designed for high-power applications. Key features include:
- Voltage Rating: 200V
- Current Rating: 30A (continuous)
- Low On-Resistance (RDS(on)): 85mΩ (max)
- Fast Switching Speed
- TO-247 Package for efficient heat dissipation
It is commonly used in switching power supplies, motor control, and audio amplifiers due to its robustness and efficiency. The MPBF suffix indicates it is lead-free and RoHS-compliant.
For optimal performance, ensure proper gate drive voltage (10V recommended) and thermal management. Always refer to the datasheet for detailed specifications.

Equivalent

Equivalent products to the IRFP250MPBF (N-channel MOSFET, 200V, 30A, 0.075Ω) include:
- IRFP250N (similar specs, same series)
- IRFP260N (higher current, 50A)
- IRFP264N (higher voltage, 250V)
- STP80NF55-06 (55V, 80A, comparable RDS(on))
- FQP30N06L (60V, 32A, logic-level)
Check datasheets for exact compatibility in your application.

Features

The IRFP250MPBF is an N-channel power MOSFET with the following key features:
- Voltage Rating: 200V (VDSS)
- Current Rating: 30A (continuous)
- Low On-Resistance (RDS(on)): 85mΩ (max at VGS = 10V)
- Fast Switching: Suitable for high-frequency applications
- High Power Handling: Up to 190W (TC = 25°C)
- Avalanche Energy Rated: Robust against inductive loads
- TO-247 Package: Good thermal performance
- Logic-Level Gate Drive: Compatible with 5V drive (but optimized for 10V)
Ideal for switching power supplies, motor control, and inverters.

Pinout

The IRFP250MPBF is a TO-247AC packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- V_DSS: 200V
- I_D: 30A (continuous)
- R_DS(on): 85mΩ (max at 10V V_GS)
- Fast switching for power applications.
Used in power supplies, motor drives, and inverters.

Manufacturer

The IRFP250MPBF is manufactured by Infineon Technologies, a leading German semiconductor company. Infineon specializes in power electronics, automotive systems, and IoT solutions, known for high-performance transistors, MOSFETs, and other semiconductor components. The IRFP250MPBF is a power MOSFET designed for applications like switching power supplies and motor control.
Infineon emerged from Siemens' semiconductor division in 1999 and is now a global leader in its field, serving industries such as automotive, industrial, and renewable energy.

Application

The IRFP250MPBF, a power MOSFET, is widely used in:
1. Power Supplies – Switching regulators, inverters, and DC-DC converters.
2. Motor Control – Drives for brushed/brushless motors in industrial and automotive systems.
3. Audio Amplifiers – High-power Class-D amplifiers.
4. Renewable Energy – Solar inverters and wind power systems.
5. Industrial Equipment – Welding machines, UPS systems, and induction heating.
Its high current (30A) and voltage (200V) ratings, low on-resistance, and robust performance make it suitable for high-efficiency switching applications.

Package

The IRFP250MPBF is a Power MOSFET housed in a TO-247AC package. This package type is designed for high-power applications, featuring three leads (gate, drain, source) and a robust, heat-dissipating design. The TO-247AC variant includes an exposed metal tab for improved thermal performance, making it suitable for demanding circuits requiring efficient heat management.