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IRFZ34NS
+StücklisteMOSFET N-CH 55V 29A D2PAK
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HerstellerInfineon-Technologien
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Herstellerteil #IRFZ34NS
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Datenblatt IRFZ34NS DataSheet
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Auf Lager6801
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Spezifikationen
| Attribut | Wert |
| Supplier | Infineon Technologies |
| Package / Case | Tube |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain(Id) @ 25°C | 29A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 40mOhm @ 16A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 34 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 700 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
Übersicht
Description
Key points:
- VDS: 55 V; ID: about 16–17 A (continuous)
- RDS(on): ~0.04 Ω typical at VGS = 10 V (higher at lower temps)
- Gate threshold: ~2–4 V; must drive with ~10 V for low RDS(on)
- VGS max: ±20 V
- Packaging: variants exist (NS suffix relates to a specific package/series; check the exact datasheet for TO-220 or surface-mount options)
- Not a true logic-level device at 5 V; good conduction requires higher gate drive
- Use with proper heat sinking and gate protection; review SOA for switching/transient requirements
Applications: switching elements in DC-DC converters, motor drivers, power switches, H-bridges.
Note: always consult the exact datasheet for your specific NS variant to confirm packaging and electrical ratings.
Equivalent
- IRFZ34N (same device)
- STP55NF06L (ST, 60 V, ~55 A, logic-level)
- FQP30N06L (60 V, ~30 A, logic-level)
- IRLZ44N (55 V, logic-level, ~40–47 A)
- IRFZ44N (55 V, ~49 A)
If driving at low gate voltage (4–5 V), prefer logic-level types. Check Rds(on) and packaging for your design.
Features
- Drain–source voltage (Vds): 55 V
- Continuous drain current (Id): ~17 A (at 25°C)
- On-resistance (Rds(on)): ~0.04 Ω (typ) at Vgs = 10 V; max typically ~0.07–0.08 Ω
- Gate threshold (Vgs(th)): ~2–4 V (not a true logic-level device; best with ~10 V for low Rds(on))
- Fast switching suitable for PWM and switching regulators
- Robust avalanche energy rating for inductive loads
- Wide operating temperature range (typical MOSFET range, e.g., -55°C to +150°C)
- Pb-free, RoHS-compliant
- Package: TO-220 (through-hole) variant commonly available as IRFZ34NS
Note: Always verify exact numbers from the specific datasheet revision for your part/date code.
Pinout
- Function: N-channel enhancement-mode MOSFET. Pinout (front view, leads down): Pin 1 = Gate, Pin 2 = Drain (connected to the tab), Pin 3 = Source. Used as a switch or amplifier; conducts drain–source current when Vgs exceeds threshold.
Manufacturer
- What kind of company: A German multinational semiconductor company that designs and manufactures power semiconductors, ICs, and security technologies for automotive, industrial, and consumer applications.
Application
- Switching power supplies and DC-DC converters (buck/boost/buck-boost) with PWM
- DC motor and stepper motor drive circuits (H-bridge, speed control)
- Power inverters and motor-driver applications
- Class D audio output stages
- Automotive and industrial PWM power switches/load switches
- Solar/renewable energy DC-DC conversion and MPPT circuits
Used where a high-current, moderate-voltage switching device is needed with fast switching.
