IRLB4030PBF

Abbildungen dienen nur als Referenz

IRLB4030PBF

+Stückliste

MOSFET N-CH 100V 180A TO220AB

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Package / Case Tube
Series HEXFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 180A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 4.3mOhm @ 110A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 130 nC @ 4.5 V
Vgs(Max) ±16V
Input Capacitance(Ciss)(Max) @ Vds 11360 pF @ 50 V
Power Dissipation (Max) 370W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB

Übersicht

Equivalent

Equivalent products to the IRLB4030PBF (N-channel MOSFET, 30V, 195A, 1.7mΩ) include:
- IRLB3034PBF (40V, 195A, 1.4mΩ)
- IRL1004PBF (40V, 130A, 4mΩ)
- IRF3205 (55V, 110A, 8mΩ)
- AUIRF1324S-7P (40V, 240A, 1.2mΩ)
- STP160N4F6 (40V, 160A, 2.5mΩ)
Check datasheets for exact compatibility in your application.

Features

The IRLB4030PBF is a Power MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 170A (pulsed), 120A (continuous)
- Low On-Resistance (RDS(on)): 1.7mΩ @ 10V
- Fast Switching: Optimized for high-efficiency power applications
- Logic-Level Gate Drive: 4.5V threshold (compatible with 5V microcontrollers)
- TO-220AB Package: Easy mounting and heat dissipation
- Avalanche Energy Rated: Robust against voltage spikes
- Low Gate Charge (Qg): Enhances switching performance
Ideal for DC-DC converters, motor control, and high-current switching applications.

Pinout

The IRLB4030PBF is a TO-220AB packaged N-channel MOSFET with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high current path).
3. Source (S) – Ground/reference terminal.
Key Features:
- 30V Drain-Source Voltage (VDS)
- 195A Continuous Drain Current (ID)
- Ultra-low On-Resistance (RDS(on) = 1.7mΩ @ 10V VGS)
- Logic-Level Gate Drive (4V VGS threshold)
Commonly used in high-current switching applications like motor drivers, power supplies, and DC-DC converters.

Application

The IRLB4030PBF, a high-current N-channel MOSFET, is commonly used in:
1. Power Supplies – Efficient switching in DC-DC converters.
2. Motor Control – Drives motors in robotics, EVs, and industrial systems.
3. Inverters – Converts DC to AC in solar and UPS applications.
4. Battery Management – Controls charge/discharge in high-current circuits.
5. LED Drivers – Regulates high-power LED arrays.
Its low on-resistance (1.7mΩ) and high current rating (195A) make it ideal for high-efficiency, high-power applications.

Package

The IRLB4030PBF is a Power MOSFET available in a TO-220AB package. This through-hole package is widely used for power applications due to its robust thermal and electrical performance. It features three leads (Gate, Drain, Source) and includes a metal tab for heat dissipation, often mounted with a heatsink. The TO-220AB is industry-standard for medium-to-high-power devices.

Produkte, die mit IRLB4030PBF zusammenhängen

  • Schnellangebot

  • Senden Sie Ihre Angebotsanfrage für IRLB4030PBF Mit diesem Formular können Sie uns innerhalb von 12 Stunden kontaktieren.