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IRLR3410TRPBF
+StücklisteMOSFET N-CH 100V 17A DPAK
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HerstellerInfineon-Technologien
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Herstellerteil #IRLR3410TRPBF
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Datenblatt IRLR3410TRPBF DataSheet
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Paket TO-252
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Auf Lager7534
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 17A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4V, 10V |
| Rds On(Max) @ Id Vgs | 105mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 34 nC @ 5 V |
| Vgs(Max) | ±16V |
| Input Capacitance(Ciss)(Max) @ Vds | 800 pF @ 25 V |
| Power Dissipation (Max) | 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
Übersicht
Description
Equivalent
1. NXP PSMN015-30PL
2. STMicroelectronics STP36NF06L
3. Vishay SIHB80N06L
4. Infineon IPP042N03L
Ensure to compare specifications such as voltage, current, RDS(on), and package type to confirm suitability for your application.
Features
1. N-Channel MOSFET: It facilitates efficient power handling and switching.
2. Voltage Rating: Can handle a maximum drain-source voltage (V_DS) of 100V.
3. Current Rating: Supports a continuous drain current (I_D) of up to 17.5A, which allows it to manage substantial current loads.
4. Low On-Resistance: Typically around 0.075 ohms, ensuring minimal power loss and efficient operation.
5. Rugged Construction: It is built to handle high-energy pulses and provides robustness in demanding applications.
6. Fast Switching Speed: Enhances performance in high-frequency switching applications.
7. Standard Packaging: Available in an industry-standard DPAK (TO-252) package for ease of integration into circuit designs.
8. RoHS Compliant: Meets environmental safety standards by being free of hazardous substances.
These features make the IRLR3410TRPBF suitable for use in automotive, industrial, and various electronic applications requiring reliable and efficient switching.
Pinout
1. Gate (G): The gate pin is used to control the MOSFET. By applying voltage to this pin, the MOSFET can be turned on or off, thus controlling the flow of current between the drain and source.
2. Drain (D): The drain pin is the terminal through which the current leaves the MOSFET when it is in the on state.
3. Source (S): The source pin is the terminal through which the current enters the MOSFET.
The IRLR3410TRPBF is commonly used in power management applications due to its ability to handle high current and voltage levels efficiently.