MT53E2G32D4DE-046 AAT:C

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MT53E2G32D4DE-046 AAT:C

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DRAM LPDDR4 64Gbit 32 200/264 TFBGA 4 AT

  • HerstellerMicron

  • Herstellerteil #MT53E2G32D4DE-046 AAT:C

  • Auf Lager5565

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

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Spezifikationen

Attribut Wert
Packaging Tray
Standard Pack Qty 1360

Übersicht

Description

Equivalent

The MT53E2G32D4DE-046 AAT:C chip is a 8Gb LPDDR4 DRAM from Micron. Equivalent products would include:
1. Samsung K4FBE3D4HM-MGCH
2. SK Hynix H9HKNNNCRMMVDR-NEE
3. Kingston D2516ECMDXGJD
These chips offer similar capacities and specifications, suitable for mobile and embedded applications requiring low power and high performance. Always verify specific needs and compatibility when selecting alternatives.

Features

The MT53E2G32D4DE-046 AAT:C is a DRAM module, specifically a LPDDR4x (Low Power Double Data Rate 4X) memory chip. It features a capacity of 2GB and is organized in a 32-bit configuration. This type of memory is designed for mobile and portable devices, offering a balance of high performance and low power consumption.
Key features include:
1. Low Power Consumption: LPDDR4x technology reduces voltage levels, contributing to energy efficiency, which is crucial for battery-operated devices.
2. High Data Transfer Rates: This memory module supports high-speed data transfer, enhancing the performance of applications and overall system responsiveness.
3. Compact Size: The small form factor is ideal for use in compact devices like smartphones and tablets.
4. Improved Bandwidth: Enhanced bandwidth capabilities facilitate better multitasking and smoother operation of memory-intensive applications.
Overall, the MT53E2G32D4DE-046 AAT:C is suitable for devices requiring efficient power usage, high-speed data processing, and compact memory solutions.

Pinout

The MT53E2G32D4DE-046 AAT:C is a DRAM component, specifically a 2Gb (gigabit) LPDDR4 (Low Power Double Data Rate 4) memory device manufactured by Micron Technology. This memory device typically comes in a standard package with a 178-ball FBGA (Fine-Pitch Ball Grid Array) configuration.
The primary functions of this device include providing high-speed data transfer, low power consumption, and efficient memory storage for mobile and portable applications. It supports a wide range of features such as low voltage operation, high data rates, and various power-saving modes. The memory is organized in a 2Gb density with a 32-bit wide data bus.
The MT53E2G32D4DE-046 AAT:C is designed for use in applications like smartphones, tablets, and other consumer electronics where power efficiency and performance are critical. It provides essential memory functionality required by modern processors to handle complex computing tasks.

Manufacturer

The MT53E2G32D4DE-046 AAT:C is manufactured by Micron Technology, Inc. Micron is a leading American company in the semiconductor industry, specializing in memory and storage solutions. They produce a range of memory products including DRAM, NAND flash, and NOR flash, which are used in various computing, networking, and mobile products. Micron's innovations support a wide array of applications, from consumer electronics to data centers and automotive technology.

Application

The MT53E2G32D4DE-046 AAT:C is a dynamic random-access memory (DRAM) component often used in applications requiring high-speed data processing and efficient memory management. Common application areas include:
1. Mobile Devices: Enhances performance in smartphones and tablets by supporting fast data access and multitasking.
2. Consumer Electronics: Powers smart TVs, gaming consoles, and wearables with improved processing capabilities.
3. Automotive Systems: Supports advanced driver-assistance systems (ADAS) and infotainment systems with reliable memory solutions.
4. Networking Equipment: Facilitates efficient data handling in routers and switches.
5. Computing Devices: Used in laptops and PCs for improved processing speed and performance efficiency.
These applications benefit from the memory's low power consumption and high density.

Package

The MT53E2G32D4DE-046 AAT:C is a DRAM package type, likely featuring a BGA (Ball Grid Array) form factor commonly used for memory chips. This package type facilitates efficient thermal management and compactness, suitable for integrating into high-performance computing systems and mobile devices. For specific details, such as dimensions and pin configuration, refer to the manufacturer's datasheet or technical specifications.