Abbildungen dienen nur als Referenz
P3M06060K4
+StücklisteSICFET N-CH 650V 48A TO247-4
-
HerstellerPN Junction Halbleiter
-
Herstellerteil #P3M06060K4
-
Auf Lager60
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | PN Junction Semiconductor |
| Package / Case | Tube |
| Series | P3M |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 48A |
| Drive Voltage(Max Rds On Min Rds On) | 15V |
| Rds On(Max) @ Id Vgs | 79mOhm @ 20A, 15V |
| Vgs(th)(Max) @ Id | 2.4V @ 5mA (Typ) |
| Vgs(Max) | +20V, -8V |
| Power Dissipation (Max) | 188W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
