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SI3585DV-T1-E3
+StücklisteMOSFET N/P-CH 20V 2A 6-TSOP
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HerstellerVishay Siliconix
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Herstellerteil #SI3585DV-T1-E3
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Paket TSOT-23-6
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Auf Lager3878
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 2A, 1.5A |
| Rds On(Max) @ Id Vgs | 125mOhm @ 2.4A, 4.5V |
| Vgs(th)(Max) @ Id | 600mV @ 250µA (Min) |
| Gate Charge(Qg)(Max) @ Vgs | 3.2nC @ 4.5V |
| Power - Max | 830mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
