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SI4491EDY-T1-GE3
+StücklisteMOSFET P-CH 30V 17.3A 8SO
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HerstellerVishay Siliconix
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Herstellerteil #SI4491EDY-T1-GE3
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Auf Lager7838
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Spezifikationen
| Attribut | Wert |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 17.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 153 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 4620 pF @ 15 V |
| Power Dissipation (Max) | 3.1W (Ta), 6.9W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Base Product Number | SI4491 |
Übersicht
Description
The SI4491EDY-T1-GE3 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for efficient switching applications. It features a high current rating and low on-resistance, making it suitable for power management in various electronic circuits, including DC-DC converters and motor control.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, continuous drain current (I_D) of 50A, and a low gate threshold voltage (V_GS(th)), allowing for effective operation with low gate drive voltages. The device is housed in a compact SO-8 package, facilitating space-efficient designs.
Applications typically involve consumer electronics, automotive systems, and industrial automation, where reliable performance under varying conditions is crucial. The MOSFET is optimized for fast switching speeds, reducing power loss and enhancing overall system efficiency.
Manufacturers often choose this component for its robustness and ease of integration into complex circuits, making it a popular choice in modern electronic designs.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, continuous drain current (I_D) of 50A, and a low gate threshold voltage (V_GS(th)), allowing for effective operation with low gate drive voltages. The device is housed in a compact SO-8 package, facilitating space-efficient designs.
Applications typically involve consumer electronics, automotive systems, and industrial automation, where reliable performance under varying conditions is crucial. The MOSFET is optimized for fast switching speeds, reducing power loss and enhancing overall system efficiency.
Manufacturers often choose this component for its robustness and ease of integration into complex circuits, making it a popular choice in modern electronic designs.
Equivalent
The SI4491EDY-T1-GE3 is an N-channel MOSFET with a specific on-resistance and voltage rating. Equivalent products include the IRF3205, BSS138, and FDN338N. However, it's essential to verify specifications such as R_DS(on), V_DS, and I_D ratings to ensure compatibility in your application before substituting. Always consult datasheets for detailed comparisons.
Features
The SI4491EDY-T1-GE3 is an N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Can handle continuous drain currents up to 40A, making it suitable for high-current applications.
3. Low R_DS(on): Offers a low on-resistance of 10 mΩ (max), which minimizes power losses and enhances thermal efficiency.
4. Fast Switching: Designed for rapid switching speeds, improving performance in PWM applications.
5. Thermal Resistance: Features low thermal resistance, aiding in effective heat dissipation.
6. Package Type: Available in a compact DPAK package, facilitating easy integration into space-constrained designs.
7. Applications: Ideal for use in DC-DC converters, motor control, and power management circuits.
This combination of features makes the SI4491EDY-T1-GE3 a versatile choice for modern electronic designs requiring efficiency and reliability.
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: Can handle continuous drain currents up to 40A, making it suitable for high-current applications.
3. Low R_DS(on): Offers a low on-resistance of 10 mΩ (max), which minimizes power losses and enhances thermal efficiency.
4. Fast Switching: Designed for rapid switching speeds, improving performance in PWM applications.
5. Thermal Resistance: Features low thermal resistance, aiding in effective heat dissipation.
6. Package Type: Available in a compact DPAK package, facilitating easy integration into space-constrained designs.
7. Applications: Ideal for use in DC-DC converters, motor control, and power management circuits.
This combination of features makes the SI4491EDY-T1-GE3 a versatile choice for modern electronic designs requiring efficiency and reliability.
Pinout
The SI4491EDY-T1-GE3 is a high-performance N-channel MOSFET with a pin count of 8. Its main functions include providing efficient switching capabilities for applications such as power management and motor control. The pin configurations are as follows:
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The terminal through which current exits the MOSFET.
3. Source (S) - The terminal through which current enters the MOSFET.
4. Source (S) - Typically connected to ground or the lowest potential in the circuit.
5. Gate (G) - Can be used to drive the MOSFET.
6. Drain (D) - For secondary connections if needed.
7. Gate (G) - May have multiple gate connections for improved drive.
8. Source (S) - For additional source connections.
This component is often used in DC-DC converters, battery management systems, and other applications where efficient power handling is crucial. Its low on-resistance and fast switching speeds make it suitable for high-frequency applications.
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The terminal through which current exits the MOSFET.
3. Source (S) - The terminal through which current enters the MOSFET.
4. Source (S) - Typically connected to ground or the lowest potential in the circuit.
5. Gate (G) - Can be used to drive the MOSFET.
6. Drain (D) - For secondary connections if needed.
7. Gate (G) - May have multiple gate connections for improved drive.
8. Source (S) - For additional source connections.
This component is often used in DC-DC converters, battery management systems, and other applications where efficient power handling is crucial. Its low on-resistance and fast switching speeds make it suitable for high-frequency applications.
Manufacturer
The SI4491EDY-T1-GE3 is manufactured by Silicon Labs, a company specializing in microcontrollers, wireless, and sensor solutions. Silicon Labs is known for its innovation in the semiconductor industry, focusing on providing integrated circuits (ICs) for various applications, including Internet of Things (IoT), wireless communication, and automation. The company offers a wide range of products, including RF transceivers, timing devices, and mixed-signal ICs, catering to diverse sectors such as consumer electronics, industrial automation, and telecommunications. Founded in 1996 and headquartered in Austin, Texas, Silicon Labs emphasizes high-performance, low-power chips that enable connectivity and efficiency in electronic systems.
Application
The SI4491EDY-T1-GE3 is a high-performance N-channel MOSFET designed for applications in power management systems. Its key application areas include DC-DC converters, battery management systems, and load switching in consumer electronics. Additionally, it is used in synchronous rectification, motor control, and LED lighting. The device is valued for its low on-resistance and fast switching capabilities, making it ideal for improving energy efficiency in various power electronic circuits.
Package
The SI4491EDY-T1-GE3 is packaged in a SC-70-6 (also known as SOT-363) surface-mount package.
