SI4952DY-T1-E3

Abbildungen dienen nur als Referenz

SI4952DY-T1-E3

+Stückliste

MOSFET 2N-CH 25V 8A 8-SOIC

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier Vishay Siliconix
Package / Case Tape & Reel (TR)
Series TrenchFET®
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain(Id) @ 25°C 8A
Rds On(Max) @ Id Vgs 23mOhm @ 7A, 10V
Vgs(th)(Max) @ Id 2.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 18nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 680pF @ 13V
Power - Max 2.8W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Produkte, die mit SI4952DY-T1-E3 zusammenhängen