Abbildungen dienen nur als Referenz
MOSFET 2N-CH 20V 8SOIC
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HerstellerVishay Siliconix
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Herstellerteil #SI4966DY-T1-GE3
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Datenblatt SI4966DY-T1-GE3 DataSheet
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Paket SOIC-8
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Auf Lager4120
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR) |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On(Max) @ Id Vgs | 25mOhm @ 7.1A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 50nC @ 4.5V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
