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SI5902DC-T1-E3
+StücklisteMOSFET 2N-CH 30V 2.9A 1206-8
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HerstellerVishay Siliconix
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Herstellerteil #SI5902DC-T1-E3
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Datenblatt SI5902DC-T1-E3 DataSheet
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Paket 8-SMD, Flat Lead
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Auf Lager6270
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Obsolete |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 2.9A |
| RdsOn(Max)@IdVgs | 85mOhm @ 2.9A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA (Min) |
| GateCharge(Qg)(Max)@Vgs | 7.5nC @ 10V |
| Power-Max | 1.1W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SMD, Flat Lead |
