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SI5920DC-T1-E3
+StücklisteMOSFET 2N-CH 8V 4A 1206-8
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HerstellerVishay Siliconix
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Herstellerteil #SI5920DC-T1-E3
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Datenblatt SI5920DC-T1-E3 DataSheet
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Paket 8-SMD, Flat Lead
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Auf Lager5035
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Obsolete |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 8V |
| Current-ContinuousDrain(Id)@25°C | 4A |
| RdsOn(Max)@IdVgs | 32mOhm @ 6.8A, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 12nC @ 5V |
| InputCapacitance(Ciss)(Max)@Vds | 680pF @ 4V |
| Power-Max | 3.12W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SMD, Flat Lead |
