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SI5920DC-T1-GE3
+StücklisteMOSFET 2N-CH 8V 4A 1206-8
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HerstellerVishay Siliconix
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Herstellerteil #SI5920DC-T1-GE3
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Datenblatt SI5920DC-T1-GE3 DataSheet
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Paket 8-SMD, Flat Lead
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Auf Lager4996
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain(Id) @ 25°C | 4A |
| Rds On(Max) @ Id Vgs | 32mOhm @ 6.8A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12nC @ 5V |
| Input Capacitance(Ciss)(Max) @ Vds | 680pF @ 4V |
| Power - Max | 3.12W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
