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SI8902AEDB-T2-E1
+StücklisteN-CHANNEL 24-V (D-S) MOSFET
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HerstellerVishay Siliconix
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Herstellerteil #SI8902AEDB-T2-E1
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Datenblatt SI8902AEDB-T2-E1 DataSheet
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Paket UFBGA-6
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Auf Lager2936
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain(Id) @ 25°C | 11A |
| Rds On(Max) @ Id Vgs | 28mOhm @ 1A, 4.5V |
| Vgs(th)(Max) @ Id | 900mV @ 250µA |
| Power - Max | 5.7W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
