Abbildungen dienen nur als Referenz
MOSFET 2N-CH 20V 6.2A 8-SOIC
-
HerstellerVishay Siliconix
-
Herstellerteil #SI9926BDY-T1-E3
-
Paket SOIC-8
-
Auf Lager7249
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 6.2A |
| Rds On(Max) @ Id Vgs | 20mOhm @ 8.2A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 20nC @ 4.5V |
| Power - Max | 1.14W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
