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MOSFET 2N-CH 20V 4.5A SC70-6
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HerstellerVishay Siliconix
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Herstellerteil #SIA906EDJ-T1-GE3
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Datenblatt SIA906EDJ-T1-GE3 DataSheet
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Paket PowerPAK® SC-70-6 Dual
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Auf Lager24253
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Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 4.5A |
| Rds On(Max) @ Id Vgs | 46mOhm @ 3.9A, 4.5V |
| Vgs(th)(Max) @ Id | 1.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 12nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 350pF @ 10V |
| Power - Max | 7.8W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
Key features of the SIA906EDJ-T1-GE3 include low on-resistance, which minimizes power losses and improves efficiency, and a compact design suitable for space-constrained applications. It is often used in consumer electronics, automotive, and industrial applications, where reliable and efficient power switching is needed. The device is designed to handle a specific range of voltage and current, making it ideal for particular types of electronic designs.
The SIA906EDJ-T1-GE3 is also known for its robustness in thermal management, which enhances its performance and longevity in demanding environments. This makes it a valuable component for engineers looking to optimize power efficiency in their designs.
Equivalent
1. Nexperia's PSMN0R9-25YLD,
2. Infineon's BSZ042N06LS5,
3. ON Semiconductor's NTMFS5C604NL,
4. STMicroelectronics' STL140N6F7, and
5. Texas Instruments' CSD18541F5.
Ensure compatibility by checking the datasheets for exact specifications such as voltage rating, current capacity, and package type.
Features
1. Dual Transistors: It houses two N-channel MOSFETs in a single package, optimizing board space.
2. Compact Package: Available in a PowerPAK® SC-70 package, offering a small footprint.
3. Low On-Resistance: Features low RDS(on) to reduce power loss and improve efficiency.
4. High Current Capability: Can handle significant current, suitable for power management applications.
5. Fast Switching Speed: Enhances overall system performance with quick response times.
6. Thermal Performance: PowerPAK® packaging ensures efficient thermal performance.
7. Applications: Ideal for use in DC-DC converters, load switches, and power management in portable and handheld devices.
These features make the SIA906EDJ-T1-GE3 suitable for high-efficiency and space-constrained applications.
Pinout
As a MOSFET, its primary function is to switch electronic signals and power in various applications, including power management, load switching, and similar functions. The pins in such a configuration usually include the gate, drain, and source terminals, which are essential for the operation of the MOSFET. Additionally, there may be multiple pins for the drain and source to allow for higher current handling and better thermal performance, a common practice in power MOSFET designs.
For precise pin functions and detailed specifications, you should refer to the specific datasheet provided by Vishay for the SIA906EDJ-T1-GE3.