SIA914DJ-T1-E3

Abbildungen dienen nur als Referenz

SIA914DJ-T1-E3

+Stückliste

MOSFET 2N-CH 20V 4.5A SC70-6

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier Vishay Siliconix
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain(Id) @ 25°C 4.5A
Rds On(Max) @ Id Vgs 53mOhm @ 3.7A, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 11.5nC @ 8V
Input Capacitance(Ciss)(Max) @ Vds 400pF @ 10V
Power - Max 6.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Produkte, die mit SIA914DJ-T1-E3 zusammenhängen