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SIR638DP-T1-GE3
+StücklisteMOSFET N-CH 40V 100A PPAK SO-8
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HerstellerVishay Siliconix
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Herstellerteil #SIR638DP-T1-GE3
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Auf Lager9300
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Spezifikationen
| Attribut | Wert |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 0.88mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 204 nC @ 10 V |
| Vgs (Max) | +20V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 20 V |
| Power Dissipation (Max) | 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SIR638 |
Übersicht
Description
SIR638DP-T1-GE3 is a high-performance, N-channel MOSFET designed for applications requiring efficient power management and switching. It features low on-resistance (Rds(on)), enabling minimal power loss and improved thermal performance, making it suitable for various applications such as power supplies, motor drives, and battery management systems. The device operates at a wide range of voltages, which enhances its versatility in different electronic circuits. Additionally, its fast switching capabilities allow for efficient operation in high-frequency applications. With an emphasis on reliability and robustness, the SIR638DP-T1-GE3 incorporates advanced packaging that aids in heat dissipation and minimizes parasitic inductance, further improving its performance. Overall, this MOSFET is ideal for engineers seeking a reliable component for efficient power conversion and management in modern electronic designs.
Equivalent
The SIR638DP-T1-GE3 is a N-channel MOSFET. Equivalent products include the IRF820, STP16NF06, and FQP30N06L. For precise substitutes, always verify specifications such as voltage, current ratings, and package types to ensure compatibility with your application.
Features
The SIR638DP-T1-GE3 is a N-channel MOSFET designed for efficient power management applications. Its key features include:
- Voltage Rating: 30V drain-source voltage (Vds).
- Continuous Drain Current: Up to 70A, allowing for high current applications.
- Low Rds(on): Typically 0.0085 Ohms at Vgs = 10V, ensuring minimal conduction losses.
- Fast Switching Speed: Suitable for high-frequency applications, enhancing performance in power conversion.
- Thermal Resistance: Low thermal resistance for better heat dissipation, contributing to improved reliability.
- Package Type: Available in a TO-220 package, facilitating easy mounting and heat sinking.
- Gate Threshold Voltage: Typically 2-4V, allowing for efficient operation with lower gate drive voltages.
These features make the SIR638DP-T1-GE3 ideal for applications like DC-DC converters, motor drivers, and other power management systems.
- Voltage Rating: 30V drain-source voltage (Vds).
- Continuous Drain Current: Up to 70A, allowing for high current applications.
- Low Rds(on): Typically 0.0085 Ohms at Vgs = 10V, ensuring minimal conduction losses.
- Fast Switching Speed: Suitable for high-frequency applications, enhancing performance in power conversion.
- Thermal Resistance: Low thermal resistance for better heat dissipation, contributing to improved reliability.
- Package Type: Available in a TO-220 package, facilitating easy mounting and heat sinking.
- Gate Threshold Voltage: Typically 2-4V, allowing for efficient operation with lower gate drive voltages.
These features make the SIR638DP-T1-GE3 ideal for applications like DC-DC converters, motor drivers, and other power management systems.
Pinout
The SIR638DP-T1-GE3 is a N-channel MOSFET with a pin count of 8. It is primarily used in power management applications, specifically for high-efficiency switching.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to ground or the negative side of the power source.
The remaining pins may include various functions related to thermal or efficiency characteristics, though specific pin functions can depend on whether the device is in a package that also supports additional features.
Overall, the SIR638DP-T1-GE3 is designed for applications requiring low RDS(on) for improved efficiency and thermal performance.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to ground or the negative side of the power source.
The remaining pins may include various functions related to thermal or efficiency characteristics, though specific pin functions can depend on whether the device is in a package that also supports additional features.
Overall, the SIR638DP-T1-GE3 is designed for applications requiring low RDS(on) for improved efficiency and thermal performance.
Manufacturer
The SIR638DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company specializing in discrete semiconductors and passive electronic components. Founded in 1962, the company designs, manufactures, and supplies a wide range of products, including resistors, capacitors, inductors, diodes, and MOSFETs like the SIR638DP-T1-GE3. Vishay serves various industries, including automotive, industrial, telecommunications, and consumer electronics, providing essential components for a multitude of electronic applications. With a strong emphasis on innovation and quality, Vishay is recognized as a leading supplier in the electronic components market.
Application
The SIR638DP-T1-GE3 is a N-channel MOSFET used primarily in power management applications. Its key application areas include synchronous rectification in switch-mode power supplies, DC-DC converters, and motor control systems. It is also utilized in load switching, battery management systems, and high-efficiency lighting applications. With its low on-resistance and fast switching capabilities, it is suitable for both consumer electronics and industrial applications, enhancing energy efficiency and performance.
Package
The SIR638DP-T1-GE3 is packaged in a DPAK (TO-252) format. This package type features a surface-mount design, providing efficient thermal performance and compactness for power management applications.
