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MOSFET N-CH 100V 60A PPAK SO-8
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HerstellerVishay Siliconix
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Herstellerteil #SIR870DP-T1-GE3
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Auf Lager23409
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Spezifikationen
| Attribut | Wert |
| Series | TrenchFET® |
| Part Status | Active |
| Base Product Number | SIR870 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 50 V |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
