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SIZ910DT-T1-GE3
+StücklisteMOSFET 2N-CH 30V 40A POWERPAIR
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HerstellerVishay Siliconix
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Herstellerteil #SIZ910DT-T1-GE3
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Datenblatt SIZ910DT-T1-GE3 DataSheet
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Paket WDFN-8
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Auf Lager2232
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 40A |
| Rds On(Max) @ Id Vgs | 5.8mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 40nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1500pF @ 15V |
| Power - Max | 48W, 100W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
