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SQJ844AEP-T1_GE3
+StücklisteMOSFET 2N-CH 30V 8A PPAK SO-8
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HerstellerVishay Siliconix
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Herstellerteil #SQJ844AEP-T1_GE3
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Datenblatt SQJ844AEP-T1_GE3 DataSheet
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Paket PowerPAK® SO-8 Dual
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Auf Lager5674
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 8A |
| Rds On(Max) @ Id Vgs | 16.6mOhm @ 7.6A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 26nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1161pF @ 15V |
| Power - Max | 48W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
