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SQJB60EP-T2_GE3
+StücklisteDUAL N-CHANNEL 60-V (D-S) 175C M
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HerstellerVishay Siliconix
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Herstellerteil #SQJB60EP-T2_GE3
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Datenblatt SQJB60EP-T2_GE3 DataSheet
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Paket PowerPAK® SO-8 Dual
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Auf Lager8064
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
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Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 30A (Tc) |
| Rds On(Max) @ Id Vgs | 12mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 30nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1600pF @ 25V |
| Power - Max | 48W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
