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SQS401ENW-T1_GE3
+StücklisteMOSFET P-CH 40V 16A PPAK1212-8
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HerstellerVishay Siliconix
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Herstellerteil #SQS401ENW-T1_GE3
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Datenblatt SQS401ENW-T1_GE3 DataSheet
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Auf Lager4220
365 Tage Qualitätsgarantie
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Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21.2 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1875 pF @ 20 V |
| Power Dissipation (Max) | 62.5W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8W |
| Package / Case | PowerPAK® 1212-8W |
| Base Product Number | SQS401 |
Übersicht
Description
In an introduction to this model, you would discuss its specifications, applications, and benefits in operational settings, emphasizing its role in improving productivity and reliability. This device is often utilized in environments like manufacturing, logistics, and smart buildings, contributing to industry 4.0 initiatives by enabling more informed decision-making through data analytics. Understanding its use cases and operational capabilities can help businesses leverage the technology effectively for optimal performance.
Equivalent
Features
1. Output Voltage Range: Adjustable output voltage with high accuracy.
2. Low Quiescent Current: Ensures efficient power consumption, ideal for battery-operated devices.
3. Multi-Channel Support: Capable of supplying multiple outputs, enhancing versatility.
4. High Power Supply Rejection Ratio (PSRR): Minimizes noise from the power supply, improving performance.
5. Thermal Protection: Built-in thermal shutdown feature safeguards against overheating.
6. Compact Package: Space-saving design suitable for PCB layouts with limited space.
7. Wide Input Voltage Range: Supports a broad range of input voltages for various applications.
This combination of features makes the SQS401ENW-T1_GE3 suitable for powering microcontrollers, sensors, and other low-voltage devices, enhancing the overall efficiency and reliability of electronic systems.
Pinout
1. Gate (G) - Controls the MOSFET's switching state.
2. Drain (D) - The output terminal where current flows out when the device is on.
3. Source (S) - The terminal where current enters when the device is on.
4. Body Diode - Integrated within the structure, allowing current to flow in the reverse direction when necessary.
The SQS401ENW-T1_GE3 MOSFET is commonly used in various applications including power management, motor control, and switching circuits, offering high efficiency and reliability. Always refer to the specific datasheet for detailed electrical characteristics and pin assignments.
Manufacturer
Application
1. Consumer Electronics: Powering devices such as smartphones, tablets, and laptops.
2. Industrial Automation: Supplying power for sensors, actuators, and control systems.
3. Telecommunications: Providing stable voltage for networking equipment and communication devices.
4. Embedded Systems: Used in microcontrollers and other embedded applications for efficient power management.
5. Automotive Electronics: Supporting power requirements for infotainment systems, sensors, and control modules.
Overall, it is utilized in applications requiring efficient voltage regulation and power efficiency.