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STB12NM60N-1
+StücklisteMOSFET N-CH 600V 10A I2PAK
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HerstellerSTMikroelektronik
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Herstellerteil #STB12NM60N-1
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Datenblatt STB12NM60N-1 DataSheet
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Auf Lager5068
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Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package / Case | Tube |
| Series | MDmesh™ II |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 10A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 410mOhm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 30.5 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 960 pF @ 50 V |
| Power Dissipation (Max) | 90W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK |
