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STB30NF20
+StücklisteMOSFET N-CH 200V 30A D2PAK
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HerstellerSTMikroelektronik
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Herstellerteil #STB30NF20
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Datenblatt STB30NF20 DataSheet
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Paket TO-263-3
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Auf Lager4788
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | STripFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 30A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 75mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1597 pF @ 25 V |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
Übersicht
Description
The MOSFET is characterized by its low on-resistance, which reduces energy loss and heat generation during operation, enhancing performance. It also features fast switching speeds, making it ideal for applications requiring rapid on/off cycles. The STB30NF20 is packaged in a TO-220 package, which aids in efficient heat dissipation.
Typical applications for the STB30NF20 include power supplies, motor control, and DC-DC converters. Its robustness and reliability make it a popular choice in both commercial and industrial settings. The combination of high voltage and current capabilities, along with efficient thermal management, makes the STB30NF20 a versatile component in power electronics.
Equivalent
1. IRF3205 - by International Rectifier
2. FDP047N10 - by Fairchild Semiconductor
3. FQA30N40 - by Fairchild Semiconductor
4. AOT470 - by Alpha & Omega Semiconductor
5. PSMN2R0-30YLC - by Nexperia
These equivalents should be checked for compatibility with your specific application, as differences in specifications like voltage, current, and package type might exist.
Features
1. Voltage Rating: It has a drain-source breakdown voltage (V_ds) of 200V, making it suitable for medium to high voltage applications.
2. Current Capacity: The device can handle a continuous drain current (I_d) of 30A at 25°C, allowing it to manage substantial load currents.
3. R_DS(on): It features a low on-state resistance, typically around 0.065 ohms, which minimizes power losses and improves efficiency.
4. Gate Threshold Voltage: The threshold voltage (V_gs(th)) is typically 4V, allowing it to be driven by standard logic levels.
5. Fast Switching: The device provides fast transition speeds due to its low gate charge, enhancing performance in switching applications.
6. Package: It is available in a TO-220 package, which offers good thermal performance and ease of mounting.
7. Protection: It includes built-in avalanche and dynamic dV/dt ruggedness.
These features make the STB30NF20 suitable for power supplies, motor control, and other switching applications.
Pinout
1. Gate (G): The Gate pin is used to control the MOSFET's conduction between the Drain and Source. It requires a voltage to turn the MOSFET on.
2. Drain (D): The Drain is the terminal through which the main current flows into the transistor when it is in the 'on' state.
3. Source (S): The Source is the terminal through which the main current flows out of the transistor. It is usually connected to the ground or a reference voltage.
These pins allow the STB30NF20 MOSFET to function as a switch or amplifier in various applications, such as power supplies, motor controllers, and other electronic devices.
Manufacturer
Application
1. Switching Power Supplies: Used in DC-DC converters and power management systems.
2. Motor Control: Suitable for driving motors in industrial and automotive applications.
3. Lighting Systems: Implemented in LED drivers and electronic ballasts.
4. Battery Management: Employed in battery protection circuits and charging systems.
5. Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
Its robustness and efficiency make it ideal for these applications, offering reliable performance in high-power and high-frequency environments.