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STB45N65M5
+StücklisteMOSFET N CH 650V 35A D2PAK
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HerstellerSTMikroelektronik
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Herstellerteil #STB45N65M5
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Auf Lager4904
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Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ V |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 35A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 78mOhm @ 19.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 91 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 3375 pF @ 100 V |
| PowerDissipation(Max) | 210W (Tc) |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D²PAK (TO-263) |
Übersicht
Description
STB45N65M5 is STMicroelectronics’ high‑voltage N‑channel power MOSFET. It uses trench MOSFET technology to enable efficient switching in high-voltage power electronics. The device is designed for about 650 V drain–source voltage and roughly 45 A of continuous current, making it suitable for switch‑mode power supplies, motor drives, inverters, and similar circuits. Key features typically include fast switching, rugged avalanche energy handling, a body diode for reverse protection, and gate‑drive compatibility with standard gate voltages (not guaranteed to be logic‑level; check datasheet). It’s offered in common power packages (e.g., D²PAK, TO‑220 variants). For exact specifications—VDS, ID, RDS(on), Qg, Qgd, thermal characteristics—refer to the official ST datasheet for STB45N65M5.
Equivalent
There isn’t always a single drop‑in equivalent. Substitute with other 650 V N‑channel power MOSFETs that match STB45N65M5’s VDS (650 V), Id, RDS(on), package/pinout, Qg and thermal ratings. Check parts from Infineon, Vishay, ON Semiconductor or ST’s own 650 V families and use manufacturer cross‑reference tools/datasheets to confirm fit. Always verify pinout, safe operating area and thermal data before replacing.
Features
STB45N65M5 is a high‑voltage N‑channel Power MOSFET from STMicroelectronics. Key features:
- 650 V blocking capability
- N‑channel enhancement mode device
- Fast switching with low gate charge
- Low conduction losses (low Rds(on) for efficient operation)
- Robust avalanche energy capability and good dv/dt/di/dt performance
- Wide operating temperature range for offline SMPS, adapters, PFC, and inverter applications
- Available in surface‑mount power packages (D²PAK TO‑263 and DPAK TO‑252)
Note: exact electrical specs (Rds(on), gate threshold, etc.) vary by lot and packaging; consult the datasheet for precise numbers.
- 650 V blocking capability
- N‑channel enhancement mode device
- Fast switching with low gate charge
- Low conduction losses (low Rds(on) for efficient operation)
- Robust avalanche energy capability and good dv/dt/di/dt performance
- Wide operating temperature range for offline SMPS, adapters, PFC, and inverter applications
- Available in surface‑mount power packages (D²PAK TO‑263 and DPAK TO‑252)
Note: exact electrical specs (Rds(on), gate threshold, etc.) vary by lot and packaging; consult the datasheet for precise numbers.
Pinout
STB45N65M5 is a 3-pin power device (plus a metal mounting/tab). Pinout: Gate (pin 1), Drain (pin 2), Source (pin 3), with the metal tab/heat sink tied to Drain. Function: N‑channel 650 V-class power MOSFET rated for ~45 A, used for high‑voltage switching in power supplies, converters, and motor-drive applications.
Manufacturer
- Manufacturer: STMicroelectronics (ST)
- What kind of company: A multinational European semiconductor company (headquartered in Geneva, Switzerland) that designs, manufactures, and markets a wide range of semiconductor products, including power MOSFETs, IGBTs, microcontrollers, and sensors.
- What kind of company: A multinational European semiconductor company (headquartered in Geneva, Switzerland) that designs, manufactures, and markets a wide range of semiconductor products, including power MOSFETs, IGBTs, microcontrollers, and sensors.
Application
STB45N65M5 is a high-voltage N‑channel MOSFET (650 V). Typical application areas include:
- Offline switch‑mode power supplies (PFC, flyback/forward converters)
- High-voltage DC‑DC converters
- Solar and other renewable-energy inverters
- Industrial motor drives and variable-speed drives
- UPS and telecom power equipment
- Battery chargers and energy-storage systems
- Any 650 V switching application requiring robust dv/dt tolerance and fast switching.
- Offline switch‑mode power supplies (PFC, flyback/forward converters)
- High-voltage DC‑DC converters
- Solar and other renewable-energy inverters
- Industrial motor drives and variable-speed drives
- UPS and telecom power equipment
- Battery chargers and energy-storage systems
- Any 650 V switching application requiring robust dv/dt tolerance and fast switching.
Package
The STB45N65M5 MOSFET is supplied in a TO‑247‑3L (TO‑247) through‑hole package.
