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STF22NM60N
+StücklisteMOSFET N-CH 600V 16A TO220FP
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HerstellerSTMikroelektronik
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Herstellerteil #STF22NM60N
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Datenblatt STF22NM60N DataSheet
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Paket TO-220FP
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Auf Lager4798
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Spezifikationen
| Attribut | Wert |
| Package | Tube |
| Series | MDmesh™ II |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 16A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 220mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 44 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 50 V |
| PowerDissipation(Max) | 30W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220FP |
Übersicht
Description
### Key Features:
- Voltage Rating: 600V
- Current Rating: 22A (continuous)
- Low On-Resistance (RDS(on)): 0.19Ω (max)
- Fast Switching: Optimized for high-speed operation
- Package: TO-220FP (isolated tab for better thermal management)
### Applications:
- Switching Power Supplies (SMPS)
- Motor Control
- Lighting (LED Drivers, Ballasts)
- Industrial & Consumer Electronics
### Advantages:
- High voltage tolerance
- Low conduction losses
- Improved thermal performance
Ideal for high-power, high-frequency designs requiring efficiency and reliability.
Features
- Voltage Rating: 600V drain-source voltage (VDSS).
- Current Rating: 22A continuous drain current (ID).
- Low On-Resistance: 0.19Ω (max) for reduced conduction losses.
- Fast Switching: Optimized for high-speed applications.
- Avalanche Rugged: High energy capability for reliability.
- Package: TO-220FP (isolated tab for easier mounting).
- Applications: SMPS, motor drives, lighting, and inverters.
This MOSFET combines high efficiency with robustness, making it suitable for power switching applications.
Pinout
- Pin Count: 3 pins (standard TO-220FP configuration).
- Pin Functions:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): High-voltage terminal, connected to the load.
3. Source (S): Ground/reference terminal.
This MOSFET is designed for high-efficiency switching applications, such as power supplies, motor drives, and inverters, with low on-resistance (RDS(on) = 0.19Ω max) and fast switching characteristics.
