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STH12N120K5-2
+StücklisteMOSFET N-CH 1200V 12A H2PAK-2
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HerstellerSTMikroelektronik
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Herstellerteil #STH12N120K5-2
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Datenblatt STH12N120K5-2 DataSheet
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Paket TO-263-3
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Auf Lager2608
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | MDmesh™ K5 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 12A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 690mOhm @ 6A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 100µA |
| Gate Charge(Qg)(Max) @ Vgs | 44.2 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1370 pF @ 100 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2Pak-2 |
Übersicht
Description
The STH12N120K5-2 is a high-voltage N-channel Power MOSFET designed for use in various electronic applications, particularly in power conversion and motor control systems. Manufactured by STMicroelectronics, this MOSFET is part of the MDmesh™ K5 series, which is known for its low on-resistance and fast switching performance.
Key features include a breakdown voltage of 1200V, a drain current of up to 12A, and a low gate charge, which enhances efficiency in high-frequency operations. The device is encased in a TO-247 package, providing robust thermal performance and mechanical durability. It is optimized for reduced energy loss, making it suitable for energy-efficient applications such as power supplies, inverters, and lighting systems.
The STH12N120K5-2 offers reliable operation under demanding conditions due to its rugged construction and advanced silicon technology. Its design aims to improve system performance and efficiency, making it a valuable component in modern electronic designs requiring high voltage and high efficiency.
Key features include a breakdown voltage of 1200V, a drain current of up to 12A, and a low gate charge, which enhances efficiency in high-frequency operations. The device is encased in a TO-247 package, providing robust thermal performance and mechanical durability. It is optimized for reduced energy loss, making it suitable for energy-efficient applications such as power supplies, inverters, and lighting systems.
The STH12N120K5-2 offers reliable operation under demanding conditions due to its rugged construction and advanced silicon technology. Its design aims to improve system performance and efficiency, making it a valuable component in modern electronic designs requiring high voltage and high efficiency.
Equivalent
The STH12N120K5-2 is a power MOSFET from STMicroelectronics. Its equivalents can include MOSFETs with similar voltage, current, and power ratings from other manufacturers. Some potential equivalents might be the Infineon IPW60R045P7, Fairchild (now ON Semiconductor) FDPF18N50 or IXYS IXFH30N50. It's essential to compare datasheets for parameters such as Vds, Id, Rds(on), and package type to ensure compatibility. Always verify specifics for your application.
Features
The STH12N120K5-2 is a power MOSFET designed for high efficiency and reliability in power applications. Key features include:
1. N-channel MOSFET: It is an N-channel device that facilitates easier electrical flow from the drain to the source.
2. Voltage and Current Ratings: It boasts a high voltage rating, typically around 1200V, and a continuous drain current rating of approximately 12A.
3. Low On-Resistance: This MOSFET is characterized by low on-resistance, minimizing power loss during switching and conduction.
4. High-Speed Switching: Designed for rapid switching applications, enhancing efficiency in power conversion systems.
5. Robust Design: It includes advanced protection features like avalanche ruggedness, which protects against voltage spikes.
6. Thermal Performance: Optimized for heat dissipation, it supports high thermal stability, which is crucial for reliability in demanding environments.
7. TO-247 Package: Typically housed in a TO-247 package, offering a balance between power handling capability and thermal performance.
These features make the STH12N120K5-2 suitable for applications in power supplies, converters, and other high-voltage systems.
1. N-channel MOSFET: It is an N-channel device that facilitates easier electrical flow from the drain to the source.
2. Voltage and Current Ratings: It boasts a high voltage rating, typically around 1200V, and a continuous drain current rating of approximately 12A.
3. Low On-Resistance: This MOSFET is characterized by low on-resistance, minimizing power loss during switching and conduction.
4. High-Speed Switching: Designed for rapid switching applications, enhancing efficiency in power conversion systems.
5. Robust Design: It includes advanced protection features like avalanche ruggedness, which protects against voltage spikes.
6. Thermal Performance: Optimized for heat dissipation, it supports high thermal stability, which is crucial for reliability in demanding environments.
7. TO-247 Package: Typically housed in a TO-247 package, offering a balance between power handling capability and thermal performance.
These features make the STH12N120K5-2 suitable for applications in power supplies, converters, and other high-voltage systems.
Pinout
The STH12N120K5-2 is an N-channel MOSFET typically used in power switching applications. It is part of the SuperMESH™ series by STMicroelectronics. This MOSFET is housed in a TO-247 package, which features three pins:
1. Gate (G): This pin is used to control the MOSFET's switching operation. Applying a voltage to the gate enables the flow of current between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows from the transistor when it is in the "on" state.
3. Source (S): The source is the terminal through which the current exits the transistor, completing the circuit.
This configuration is typical for an N-channel MOSFET. The STH12N120K5-2 MOSFET is designed for high voltage applications, with a drain-source voltage (V_DS) rating of 1200V and a continuous drain current of 12A. Its key benefits include improved efficiency and reduced energy loss, suitable for applications like power supplies and motor control systems.
1. Gate (G): This pin is used to control the MOSFET's switching operation. Applying a voltage to the gate enables the flow of current between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows from the transistor when it is in the "on" state.
3. Source (S): The source is the terminal through which the current exits the transistor, completing the circuit.
This configuration is typical for an N-channel MOSFET. The STH12N120K5-2 MOSFET is designed for high voltage applications, with a drain-source voltage (V_DS) rating of 1200V and a continuous drain current of 12A. Its key benefits include improved efficiency and reduced energy loss, suitable for applications like power supplies and motor control systems.
Manufacturer
The STH12N120K5-2 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide variety of semiconductor products. The company operates in fields such as microelectronics, integrated circuits, and discrete devices, serving diverse sectors including automotive, industrial, personal electronics, and communications. STMicroelectronics is known for its innovation and technology solutions, contributing to advancements in smart driving, the Internet of Things (IoT), and power and energy management applications.
Application
The STH12N120K5-2 is a high-voltage N-channel MOSFET commonly used in applications requiring efficient power management and high-speed switching. Its primary application areas include:
1. Switch Mode Power Supplies (SMPS): For efficient energy conversion.
2. Motor Drivers: In industrial and consumer electronics.
3. DC-DC Converters: For voltage regulation and power management.
4. Inverters: Particularly in photovoltaic or renewable energy systems.
5. Lighting Systems: Such as LED drivers and HID lighting.
6. Uninterruptible Power Supplies (UPS): For reliable power backup.
7. Power Factor Correction (PFC): To improve power efficiency in AC systems.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
1. Switch Mode Power Supplies (SMPS): For efficient energy conversion.
2. Motor Drivers: In industrial and consumer electronics.
3. DC-DC Converters: For voltage regulation and power management.
4. Inverters: Particularly in photovoltaic or renewable energy systems.
5. Lighting Systems: Such as LED drivers and HID lighting.
6. Uninterruptible Power Supplies (UPS): For reliable power backup.
7. Power Factor Correction (PFC): To improve power efficiency in AC systems.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
Package
The STH12N120K5-2 is a silicon N-channel IGBT (Insulated Gate Bipolar Transistor) in a high-voltage TO-220 package. This package type is commonly used for its ability to effectively dissipate heat and support high-voltage applications, making it suitable for use in power conversion and motor control circuits.
