STH3N150-2

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STH3N150-2

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MOSFET N-CH 1500V 2.5A H2PAK

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Spezifikationen

Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
Series PowerMESH™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1500 V
Current-ContinuousDrain(Id)@25°C 2.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 9Ohm @ 1.3A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 29.3 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 939 pF @ 25 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage H²PAK

Übersicht

Description

The STH3N150-2 is a high-power N-channel MOSFET designed for efficient switching and power management in industrial and automotive applications. Key features include:
- Voltage Rating: 150V
- Current Rating: Up to 3A (varies by conditions)
- Low On-Resistance (RDS(on)): Enhances efficiency by minimizing conduction losses.
- Fast Switching Speed: Optimized for high-frequency applications.
- Robust Packaging: Typically in TO-220 or similar for thermal management.
Common uses include DC-DC converters, motor drives, and power supplies. Always refer to the datasheet for precise specifications and thermal guidelines.

Equivalent

Equivalent products to the STH3N150-2 (STMicroelectronics) include:
- IRFP450 (Infineon)
- IXFH3N150 (IXYS)
- APT30GR120J (Microsemi)
- FDP3N150NZ (Fairchild/ON Semi)
These are N-channel MOSFETs with similar voltage (150V) and current (~3A) ratings. Verify specs like gate charge and switching speed for exact compatibility. Always check datasheets before substitution.

Features

The STH3N150-2 is a high-power N-channel MOSFET with the following key features:
- Voltage Rating: 1500V
- Current Rating: 3A (continuous)
- Low On-Resistance (RDS(on)): Typically 6Ω
- Fast Switching Speed: Suitable for high-frequency applications
- High Voltage Tolerance: Robust for power electronics
- Package: TO-247 (through-hole mounting)
- Applications: Used in inverters, power supplies, and industrial systems
Its high voltage and low RDS(on) make it efficient for switching applications.

Manufacturer

The STH3N150-2 is a high-voltage N-channel MOSFET manufactured by STMicroelectronics, a multinational semiconductor company headquartered in Geneva, Switzerland.
STMicroelectronics is a leading global producer of semiconductor solutions, specializing in microcontrollers, sensors, power devices, and integrated circuits for automotive, industrial, and consumer electronics. Known for innovation and reliability, the company serves a wide range of industries, including automotive, IoT, and industrial automation.
The STH3N150-2 is designed for high-voltage applications, offering robust performance in power management systems.

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