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STP12N120K5
+StücklisteMOSFET N-CH 1200V 12A TO220
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HerstellerSTMikroelektronik
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Herstellerteil #STP12N120K5
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Datenblatt STP12N120K5 DataSheet
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Auf Lager28422
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Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | MDmesh™ K5 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 12A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 690mOhm @ 6A, 10V |
| Vgs(th)(Max)@Id | 5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 44.2 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1370 pF @ 100 V |
| PowerDissipation(Max) | 250W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Übersicht
Description
The STP12N120K5 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency performance in power conversion applications. Manufactured by STMicroelectronics, this N-channel MOSFET is part of the MDmesh™ K5 series, known for its low on-state resistance and optimized gate charge, which enhance switching performances and reduce energy loss.
Key specifications include a maximum drain-source voltage (V_ds) of 1200V and a continuous drain current (I_d) of 12A, making it suitable for high-voltage applications. It also features a very low R_ds(on), minimizing conduction losses. The STP12N120K5 is commonly used in applications like industrial power supplies, lighting systems, and motor control where efficiency and reliability are critical.
The device is available in a TO-220 package, supporting ease of installation and thermal management. Its design focuses on delivering robust performance with improved efficiency and reduced size, catering to modern energy-saving standards in electronic designs.
Key specifications include a maximum drain-source voltage (V_ds) of 1200V and a continuous drain current (I_d) of 12A, making it suitable for high-voltage applications. It also features a very low R_ds(on), minimizing conduction losses. The STP12N120K5 is commonly used in applications like industrial power supplies, lighting systems, and motor control where efficiency and reliability are critical.
The device is available in a TO-220 package, supporting ease of installation and thermal management. Its design focuses on delivering robust performance with improved efficiency and reduced size, catering to modern energy-saving standards in electronic designs.
Equivalent
The STP12N120K5 is a high-voltage N-channel MOSFET. Equivalent products include:
1. Infineon IPP120N12S4-12: Similar voltage and current ratings.
2. Fairchild FDP12N120A: Offers comparable performance parameters.
3. ON Semiconductor NTP12N120S: Features similar characteristics.
Always verify the specific application requirements, as equivalent parts may differ in package type, switching speed, or other specifications.
1. Infineon IPP120N12S4-12: Similar voltage and current ratings.
2. Fairchild FDP12N120A: Offers comparable performance parameters.
3. ON Semiconductor NTP12N120S: Features similar characteristics.
Always verify the specific application requirements, as equivalent parts may differ in package type, switching speed, or other specifications.
Features
The STP12N120K5 is a power MOSFET designed for high voltage applications. Key features include:
1. N-channel MOSFET: Designed to allow current flow when a positive voltage is applied to the gate.
2. 1200V Drain-Source Voltage (Vds): Suitable for high voltage applications.
3. 12A Continuous Drain Current (Id): Can handle a substantial amount of current continuously.
4. Low On-Resistance: Enhances efficiency by reducing power loss during operation.
5. Fast Switching Performance: Supports high-frequency applications, enabling quick transition times.
6. Enhanced Avalanche Ruggedness: Provides improved reliability under high-stress conditions.
7. TO-220 Package: A popular package type, facilitating easy mounting and heat dissipation.
8. Soft Recovery Body Diode: Helps reduce electromagnetic interference and improves efficiency.
These features make the STP12N120K5 ideal for applications such as power supplies, motor control circuits, and other systems requiring efficient high-voltage switching.
1. N-channel MOSFET: Designed to allow current flow when a positive voltage is applied to the gate.
2. 1200V Drain-Source Voltage (Vds): Suitable for high voltage applications.
3. 12A Continuous Drain Current (Id): Can handle a substantial amount of current continuously.
4. Low On-Resistance: Enhances efficiency by reducing power loss during operation.
5. Fast Switching Performance: Supports high-frequency applications, enabling quick transition times.
6. Enhanced Avalanche Ruggedness: Provides improved reliability under high-stress conditions.
7. TO-220 Package: A popular package type, facilitating easy mounting and heat dissipation.
8. Soft Recovery Body Diode: Helps reduce electromagnetic interference and improves efficiency.
These features make the STP12N120K5 ideal for applications such as power supplies, motor control circuits, and other systems requiring efficient high-voltage switching.
Pinout
The STP12N120K5 is a power MOSFET produced by STMicroelectronics. It typically comes in a TO-220 package, which has three pins. Here’s a brief description of the pin functions:
1. Gate (G): This pin is used to control the MOSFET. By applying voltage to the gate, the MOSFET is turned on, allowing current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows from the power supply when the MOSFET is switched on.
3. Source (S): The source is the terminal through which the current exits the MOSFET to the load circuit when it is switched on.
This device is part of the MDmesh K5 series, known for high efficiency and fast switching, making it suitable for applications like power supplies, converters, and motor drives. It features a 1200V breakdown voltage and a low on-resistance, which enhances performance in high-voltage applications.
1. Gate (G): This pin is used to control the MOSFET. By applying voltage to the gate, the MOSFET is turned on, allowing current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows from the power supply when the MOSFET is switched on.
3. Source (S): The source is the terminal through which the current exits the MOSFET to the load circuit when it is switched on.
This device is part of the MDmesh K5 series, known for high efficiency and fast switching, making it suitable for applications like power supplies, converters, and motor drives. It features a 1200V breakdown voltage and a low on-resistance, which enhances performance in high-voltage applications.
Manufacturer
The STP12N120K5 is manufactured by STMicroelectronics, a multinational company that specializes in the design and manufacturing of semiconductor devices. STMicroelectronics is a leading global semiconductor company providing various products and solutions for industries such as automotive, industrial, personal electronics, and communications equipment. They offer a wide range of products, including microcontrollers, sensors, power management devices, and discrete semiconductors like MOSFETs, which the STP12N120K5 is an example of.
Application
The STP12N120K5 is a power MOSFET commonly used in various applications requiring efficient power management and switching. Its primary applications include:
1. Switch Mode Power Supplies (SMPS): Used in power supply units for electronic devices.
2. DC-DC Converters: Efficiently converting one DC voltage level to another.
3. Motor Control: Driving motors in industrial and consumer applications.
4. Lighting Systems: Used in LED drivers and other lighting applications.
5. Uninterruptible Power Supplies (UPS): For battery charging and power conversion.
Its high voltage rating and robust switching capabilities make it suitable for demanding industrial and consumer applications.
1. Switch Mode Power Supplies (SMPS): Used in power supply units for electronic devices.
2. DC-DC Converters: Efficiently converting one DC voltage level to another.
3. Motor Control: Driving motors in industrial and consumer applications.
4. Lighting Systems: Used in LED drivers and other lighting applications.
5. Uninterruptible Power Supplies (UPS): For battery charging and power conversion.
Its high voltage rating and robust switching capabilities make it suitable for demanding industrial and consumer applications.
Package
The STP12N120K5 is a N-channel MOSFET, and it typically comes in a TO-220 package. This package type is commonly used for power semiconductors due to its ability to handle high power levels and ease of mounting to heat sinks.
