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STP315N10F7
+StücklisteMOSFET N-CH 100V 180A TO220
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HerstellerSTMikroelektronik
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Herstellerteil #STP315N10F7
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Datenblatt STP315N10F7 DataSheet
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Auf Lager17034
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Spezifikationen
| Attribut | Wert |
| Supplier | STMicroelectronics |
| Package | Tube |
| Series | Automotive, AEC-Q101, DeepGATE™, STripFET™ VII |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 180A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.7mOhm @ 60A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 180 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 12800 pF @ 25 V |
| PowerDissipation(Max) | 315W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220 |
Übersicht
Description
The STP315N10F7 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power switching applications. Manufactured by STMicroelectronics, it is part of the MDmesh™ series, which is known for its low on-resistance and high efficiency. This specific MOSFET is built to handle high current and voltage ratings, making it suitable for various industrial and consumer electronics, including power supplies and motor control systems.
Key features of the STP315N10F7 include:
- Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 100V.
- Current Capacity: It supports a continuous drain current (I_D) of up to 315A at 25°C.
- Low On-Resistance: Offers low R_DS(on), which minimizes power loss and improves thermal efficiency.
- Fast Switching: Ensures high-speed operation, making it ideal for applications requiring rapid switching.
Overall, the STP315N10F7 is a versatile and robust component, providing reliable performance in demanding electrical environments.
Key features of the STP315N10F7 include:
- Voltage Rating: It can handle a drain-source voltage (V_DS) of up to 100V.
- Current Capacity: It supports a continuous drain current (I_D) of up to 315A at 25°C.
- Low On-Resistance: Offers low R_DS(on), which minimizes power loss and improves thermal efficiency.
- Fast Switching: Ensures high-speed operation, making it ideal for applications requiring rapid switching.
Overall, the STP315N10F7 is a versatile and robust component, providing reliable performance in demanding electrical environments.
Equivalent
The STP315N10F7 is an N-channel MOSFET from STMicroelectronics. Equivalent products from other manufacturers might include IRF3710 by Infineon, FQP30N06L by ON Semiconductor, and IPP110N10N3 by Infineon. However, it's crucial to compare the exact specifications such as voltage, current ratings, Rds(on), and package to ensure suitability for your application. Always refer to the datasheets for precise comparisons.
Features
The STP315N10F7 is a power MOSFET designed for high-efficiency performance in various applications. Key features include:
1. N-Channel MOSFET: It uses an N-channel configuration, which is ideal for high-speed switching applications.
2. Voltage and Current Ratings: It is typically rated for a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of approximately 315A, making it suitable for high-power applications.
3. R_DS(on): The low on-resistance (R_DS(on)) minimizes power loss and heat generation, contributing to efficiency.
4. Package Type: It is often available in a TO-220 or TO-247 package, which provides good thermal performance.
5. Temperature Range: It operates efficiently over a wide temperature range, supporting robust performance in various environments.
6. Applications: Commonly used in automotive, industrial, and consumer electronics for power management and control.
These features make the STP315N10F7 a versatile component for applications requiring efficient and reliable power switching.
1. N-Channel MOSFET: It uses an N-channel configuration, which is ideal for high-speed switching applications.
2. Voltage and Current Ratings: It is typically rated for a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of approximately 315A, making it suitable for high-power applications.
3. R_DS(on): The low on-resistance (R_DS(on)) minimizes power loss and heat generation, contributing to efficiency.
4. Package Type: It is often available in a TO-220 or TO-247 package, which provides good thermal performance.
5. Temperature Range: It operates efficiently over a wide temperature range, supporting robust performance in various environments.
6. Applications: Commonly used in automotive, industrial, and consumer electronics for power management and control.
These features make the STP315N10F7 a versatile component for applications requiring efficient and reliable power switching.
Pinout
The STP315N10F7 is an N-channel MOSFET. It typically comes in a TO-220 package which features three pins. The pin count and their functions are as follows:
1. Gate (G): This is the control pin that modulates the conductivity of the MOSFET. Applying a voltage to the gate allows current to flow between the source and drain.
2. Drain (D): This is the terminal through which the main current flows from the drain to the source when the MOSFET is on.
3. Source (S): This is the terminal through which the main current exits the MOSFET.
The STP315N10F7 is used in various applications for switching and amplification purposes due to its high efficiency and fast switching capabilities. It is often used in power management, motor control, and other applications requiring efficient power handling.
1. Gate (G): This is the control pin that modulates the conductivity of the MOSFET. Applying a voltage to the gate allows current to flow between the source and drain.
2. Drain (D): This is the terminal through which the main current flows from the drain to the source when the MOSFET is on.
3. Source (S): This is the terminal through which the main current exits the MOSFET.
The STP315N10F7 is used in various applications for switching and amplification purposes due to its high efficiency and fast switching capabilities. It is often used in power management, motor control, and other applications requiring efficient power handling.
Manufacturer
The STP315N10F7 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products used in various electronic applications. The company serves a multitude of sectors, including automotive, industrial, personal electronics, and communication equipment, among others. Known for its innovation and robust product portfolio, STMicroelectronics focuses on providing solutions that enhance performance and efficiency while enabling smarter technological advancements.
Application
The STP315N10F7 is a power MOSFET designed for efficient switching and amplification in electronic circuits. Its main applications include:
1. Power Supply Units: Used for efficient voltage regulation and power conversion.
2. Motor Drives: Ideal for controlling DC motors and actuators.
3. DC-DC Converters: Enhances the efficiency of step-up or step-down voltage applications.
4. Load Switches: Suitable for high-side and low-side switching.
5. Inverters: Used in solar inverters and uninterruptible power supplies (UPS).
6. Automotive Electronics: Employed in power management and control systems.
7. Consumer Electronics: Enhances performance in devices like LED lighting and battery chargers.
1. Power Supply Units: Used for efficient voltage regulation and power conversion.
2. Motor Drives: Ideal for controlling DC motors and actuators.
3. DC-DC Converters: Enhances the efficiency of step-up or step-down voltage applications.
4. Load Switches: Suitable for high-side and low-side switching.
5. Inverters: Used in solar inverters and uninterruptible power supplies (UPS).
6. Automotive Electronics: Employed in power management and control systems.
7. Consumer Electronics: Enhances performance in devices like LED lighting and battery chargers.
Package
The STP315N10F7 is a N-channel MOSFET. It typically comes in a TO-220 package, which is a through-hole design commonly used for power semiconductors due to its capability to handle high power dissipation and ease of mounting to heat sinks.
