STW33N60M2

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STW33N60M2

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MOSFET N-CH 600V 26A TO247

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Spezifikationen

Attribut Wert
Package Tube
Series MDmesh™ II Plus
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 26A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 125mOhm @ 13A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 45.5 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 1781 pF @ 100 V
PowerDissipation(Max) 190W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Übersicht

Description

The STW33N60M2 is a 600V, 33A N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): 70mΩ (typ.) at 10V, reducing conduction losses.
- Fast Switching: Optimized for high-frequency operations like SMPS, motor drives, and inverters.
- Avalanche-Rugged: Enhanced reliability under high-energy conditions.
- Low Gate Charge (Qg): Improves switching efficiency.
- TO-247 Package: Robust thermal performance for high-power applications.
Ideal for industrial, automotive, and power supply systems, it balances performance with energy efficiency. Always refer to the datasheet for detailed specs and application guidelines.

Equivalent

Equivalent products to the STW33N60M2 (600V, 33A MOSFET) include:
- IPP60R190P6XKSA1 (Infineon)
- FCP33N60 (ON Semiconductor)
- IRFP33N60K (Infineon)
- STP33N60M2 (STMicroelectronics, similar specs)
These alternatives offer comparable voltage, current, and RDS(on) ratings. Verify pin compatibility and thermal performance for your application.

Features

The STW33N60M2 is a 600V, 33A N-channel Power MOSFET with key features:
- Low On-Resistance: 70mΩ (max) at 10V, reducing conduction losses.
- Fast Switching: Optimized for high-efficiency applications.
- Avalanche Rated: Robust against inductive load spikes.
- Low Gate Charge (Qg): 60nC (typ), improving switching performance.
- SuperMESH™ Technology: Enhances efficiency and thermal behavior.
- TO-247 Package: High power dissipation capability.
- Applications: SMPS, motor drives, inverters, and industrial systems.
Suitable for high-power, high-frequency designs.

Pinout

The STW33N60M2 is a 600V, 33A N-channel Power MOSFET in a TO-247 package.
Pin Count: 3 pins (Gate, Drain, Source).
Functions:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the high-voltage load.
3. Source (S): Ground/reference terminal.
Key Features:
- Low on-resistance (RDS(on) = 70mΩ).
- Fast switching for power applications (e.g., inverters, motor drives).
- Avalanche rugged for reliability.
Designed for high-efficiency power conversion.

Manufacturer

The STW33N60M2 is a power MOSFET manufactured by STMicroelectronics, a global semiconductor company based in Switzerland. STMicroelectronics specializes in designing and producing a wide range of semiconductor products, including microcontrollers, sensors, power devices, and analog ICs, serving industries like automotive, industrial, and consumer electronics. The company is known for its innovation in energy-efficient and high-performance solutions.
The STW33N60M2 is a 600V, 33A MOSFET designed for high-power switching applications, commonly used in power supplies, motor drives, and inverters. STMicroelectronics is a reputable player in the power electronics market, emphasizing reliability and advanced technology.

Application

The STW33N60M2 is a 600V, 33A N-channel MOSFET, ideal for high-power switching applications. Key application areas include:
1. Switched-Mode Power Supplies (SMPS) – Used in AC/DC and DC/DC converters.
2. Motor Control – Drives motors in industrial and automotive systems.
3. Inverters – Found in solar inverters and UPS systems.
4. Induction Heating – Enables efficient power conversion in heating systems.
5. LED Lighting – Powers high-brightness LED drivers.
Its low on-resistance (RDS(on)) and fast switching make it suitable for energy-efficient designs.

Package

The STW33N60M2 is a power MOSFET housed in a TO-247 package. This package type is robust, suitable for high-power applications, and features three leads for gate, drain, and source connections. The TO-247 design ensures efficient heat dissipation, making it ideal for demanding environments like power supplies and motor drives.

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