STW40N60M2

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STW40N60M2

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MOSFET N-CH 600V 34A TO247

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Attribut Wert
Package Tube
Series MDmesh™ II Plus
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 34A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 88mOhm @ 17A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 57 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 2500 pF @ 100 V
PowerDissipation(Max) 250W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Übersicht

Description

The STW40N60M2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power conversion applications. It belongs to the MDmesh II series, known for its low on-resistance and high-speed switching capabilities, making it ideal for use in power supplies, inverters, and motor control systems.
Key features of the STW40N60M2 include a drain-source voltage (V_DS) of 600V, a continuous drain current (I_D) of 40A, and a very low on-resistance (R_DS(on)) which minimizes power losses. It also offers a fast recovery body diode and a high avalanche ruggedness, enhancing its reliability in demanding environments.
The device is housed in a TO-247 package, which provides effective thermal performance and is suitable for applications requiring efficient heat dissipation. The combination of advanced silicon technology and design makes the STW40N60M2 an excellent choice for applications requiring high efficiency and robustness.

Equivalent

The STW40N60M2 is a N-channel MOSFET with a 600V voltage rating and a 40A continuous drain current. Equivalent products include:
1. IRFP460 - 500V, 20A MOSFET
2. FCP190N60E - 600V, 40A MOSFET
3. IXFH40N60Q - 600V, 40A MOSFET
4. AOT40N60 - 600V, 40A MOSFET
These alternatives have similar voltage and current ratings, though package and specific characteristics may vary. Always check the datasheets for compatibility with your application.

Features

The STW40N60M2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency and high-speed switching applications. Here are its key features:
1. N-Channel MOSFET: It operates as an N-channel, enhancing high-speed switching performance.
2. VDSS Rating: It has a drain-source voltage (VDSS) of 600V, making it suitable for high-voltage applications.
3. ID Rating: The maximum continuous drain current (ID) is 40A, catering to high-power applications.
4. RDS(on): It features a low on-state resistance (RDS(on)), improving efficiency by reducing power loss.
5. Gate Charge (Qg): The device offers a low total gate charge, enhancing switching speed.
6. Package Type: It typically comes in a TO-247 package, which aids in heat dissipation.
7. Applications: Suitable for power supplies, converters, and motor control applications.
8. Ruggedness: Built with robust construction to withstand high-energy pulses and stress.
These features make the STW40N60M2 ideal for various power management and conversion applications, ensuring reliability and efficiency.

Pinout

The STW40N60M2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It typically comes in a TO-247 package, which has three pins. The pin count and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's on/off state by applying a voltage to it.
2. Drain (D): This is the terminal where the load is connected, and it carries current when the MOSFET is in the 'on' state.
3. Source (S): This terminal is connected to ground or the negative side of the power supply, completing the circuit when the MOSFET is activated.
The STW40N60M2 is part of the MDmesh II series, known for its low on-resistance and high-frequency switching capabilities, making it suitable for applications like power supplies, motor drives, and lighting. It can handle a maximum drain-source voltage of 600V and a continuous drain current of up to 40A.

Manufacturer

The STW40N60M2 is manufactured by STMicroelectronics. STMicroelectronics, commonly referred to as ST, is a global semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products and solutions. The company is headquartered in Geneva, Switzerland, and operates worldwide, serving various sectors including industrial, automotive, personal electronics, and communications. STMicroelectronics is known for its expertise in developing integrated circuits and discrete devices that are used in myriad applications, from consumer electronics to industrial automation systems.

Application

The STW40N60M2 is a power MOSFET featuring high-speed switching and low conduction losses. It is commonly used in the following application areas:
1. Switch Mode Power Supplies (SMPS): Efficient power conversion in computer, consumer electronics, and industrial power supplies.
2. Motor Drives: Used in motor control applications for industrial and automotive sectors.
3. Inverters: Suitable for DC-AC inverter applications, such as solar inverters.
4. Converters: Ideal in DC-DC converters for telecommunications and data centers.
5. Lighting: Used in ballast and LED lighting systems for high efficiency.
6. Uninterruptible Power Supplies (UPS): Provides reliable power switching in backup systems.
These applications benefit from the device’s robustness, efficiency, and reliability.

Package

The STW40N60M2 is typically available in a TO-247 package. This package type is used for high-power transistors and allows for efficient thermal management and ease of mounting in power electronic applications.

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