Part A
2N7002K-7
Dioden Incorporated
- Lifecycle
- Active
- Stock
- 5630 Stückzahl
- Package
- SOT-23-3
- Series
- Transistoren von FETs, MOSFETs von Single
Replacement verdict
Compatible functional replacement candidate
The 2N7002K-7 is a functionally compatible replacement candidate for the 2N7002-7-F, sharing the same N-channel MOSFET topology, SOT-23 footprint, and 60 V drain-source rating. Designers should validate gate threshold spread and RDS(on) at the intended drive voltage before committing to volume production.
Drain-Source Voltage Rating
High match
Continuous Drain Current
High match
Package Type
High match
On-Resistance
Validation required
Parts at a glance
Part B
2N7002-7-F
Dioden Incorporated
- Lifecycle
- Active
- Stock
- 5757 Stückzahl
- Package
- SOT-23-3
- Series
- Transistoren von FETs, MOSFETs von Single
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002-7-F | 2N7002K-7 | Why it matters |
|---|---|---|---|
| Drain-Source Voltage (Vds) | 60 V | 60 V | Maximum voltage the MOSFET can block; must meet or exceed the circuit's voltage stress for safe operation. |
| Continuous Drain Current (Id) | 115 mA | 115 mA | Defines the maximum continuous load current the device can carry without exceeding thermal limits. |
| Drain-Source On-Resistance (Rds(on)) | 7.5 Ω @ Vgs=10V, Id=50mA | 7.5 Ω @ Vgs=10V, Id=50mA | Lower on-resistance reduces conduction losses and voltage drop, directly affecting efficiency and heat generation. |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.5 V | 1.0 V to 2.5 V | Determines the gate voltage needed to turn the device on; critical for compatibility with logic-level drive circuits. |
| Gate-Source Voltage (Vgs) Max | ±20 V | ±20 V | Maximum safe gate drive voltage; exceeding it can permanently damage the gate oxide. |
| Power Dissipation (Pd) | 200 mW | 200 mW | Maximum power the package can dissipate; limits how much current and voltage the device can handle simultaneously. |
| Input Capacitance (Ciss) | 50 pF | 50 pF | Affects switching speed and gate drive requirements; higher capacitance slows transitions and increases drive losses. |
| Package / Mounting | SOT-23, Surface Mount | SOT-23, Surface Mount | Must match the PCB footprint and assembly process for direct drop-in replacement. |
| Operating Junction Temperature | -55 °C to +150 °C | -55 °C to +150 °C | Defines the thermal operating window; must cover the application's ambient and self-heating conditions. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002K-7 | 2N7002-7-F |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 380mA (Ta) | 115mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V | 7.5Ohm @ 50mA, 5V |
| Vgs(th)(Max) @ Id | 2.5V @ 1mA | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.3 nC @ 4.5 V | - |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 370mW (Ta) | 370mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
Frequently asked questions
What are the key differences between the 2N7002-7-F and the 2N7002K-7?
The 2N7002-7-F and 2N7002K-7 are both N-channel enhancement-mode MOSFETs in SOT-23 packages, but they differ in gate-source voltage rating, gate threshold voltage range, and RDS(on) characteristics. The 2N7002K-7 is designed with a higher gate-source voltage rating and tighter threshold voltage specification compared to the standard 2N7002-7-F.
Are the 2N7002-7-F and 2N7002K-7 pin-compatible?
Yes. Both devices are offered in the SOT-23 (TO-236) package with the same pinout: pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. This allows them to share the same PCB footprint.
What is the drain-source voltage (VDS) rating for both devices?
Both the 2N7002-7-F and 2N7002K-7 have a maximum drain-source voltage rating of 60 V.
What is the continuous drain current (ID) rating for these MOSFETs?
Both the 2N7002-7-F and 2N7002K-7 are rated for a continuous drain current of 115 mA at 25°C case temperature, with a pulsed drain current rating of 800 mA.
How do the gate threshold voltages (VGS(th)) compare between the two parts?
The 2N7002-7-F specifies a gate threshold voltage range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. The 2N7002K-7 specifies a tighter gate threshold voltage range of 1.0 V to 2.0 V under the same test conditions, which can be advantageous for designs requiring more predictable turn-on behavior.
What is the maximum gate-source voltage (VGS) for each device?
The 2N7002-7-F has a maximum gate-source voltage rating of ±20 V. The 2N7002K-7 has a maximum gate-source voltage rating of ±20 V as well, though some manufacturer datasheets for the 2N7002K may specify a higher rating. Designers should verify the specific manufacturer datasheet for the exact part number being used.
Can the 2N7002K-7 be used as a direct replacement for the 2N7002-7-F?
In many low-power switching applications, the 2N7002K-7 can replace the 2N7002-7-F because they share the same package, pinout, and basic voltage/current ratings. However, the tighter VGS(th) range and potentially different RDS(on) characteristics of the 2N7002K-7 should be validated against the specific circuit requirements, especially in designs sensitive to threshold voltage or on-resistance.
What are the typical on-resistance (RDS(on)) values for these MOSFETs?
The 2N7002-7-F typically specifies RDS(on) of 1.2 Ω at VGS = 10 V and ID = 500 mA, and 1.8 Ω at VGS = 4.5 V and ID = 500 mA. The 2N7002K-7 typically specifies RDS(on) of 1.2 Ω at VGS = 10 V and ID = 500 mA, and 2.0 Ω at VGS = 4.5 V and ID = 500 mA. Exact values may vary by manufacturer; always consult the specific datasheet.
Which applications are best suited for the 2N7002K-7 over the 2N7002-7-F?
The 2N7002K-7 is often preferred in applications requiring a tighter gate threshold voltage specification, such as low-voltage logic-level switching, battery-powered circuits, and designs where consistent turn-on characteristics across production lots are critical. The 2N7002-7-F remains suitable for general-purpose low-power switching where a wider VGS(th) range is acceptable.