2N7002,215 vs 2N7002K-7

Dieser detaillierte Vergleich von 2N7002,215 und 2N7002K-7 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K-7 and 2N7002,215 are functionally compatible N-channel MOSFETs suitable for direct substitution in most low-power switching applications. Both devices share identical drain-source voltage, continuous drain current, and power dissipation ratings, with the primary distinction being package style and gate threshold voltage tolerance. Designers should verify gate drive compatibility and thermal layout when substituting between the SOT-23 and TO-236AB packages.

Drain-Source Voltage Rating High match

Continuous Drain Current High match

Package Type Validation required

Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002,215

Nexperia USA Inc.

Lifecycle: Active
Stock: 6582 Stückzahl
Package: SOT-23-3
Series: Transistoren von FETs, MOSFETs von Single

+Stückliste Anfrage

Part B

2N7002K-7

Dioden Incorporated

Lifecycle: Active
Stock: 5630 Stückzahl
Package: SOT-23-3
Series: Transistoren von FETs, MOSFETs von Single

+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002,215	2N7002K-7
Series	TrenchMOS™	-
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain(Id) @ 25°C	300mA (Ta)	380mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	10V	5V, 10V
Rds On(Max) @ Id Vgs	5Ohm @ 500mA, 10V	2Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id	2.5V @ 250µA	2.5V @ 1mA
Vgs(Max)	±30V	±20V
Input Capacitance(Ciss)(Max) @ Vds	50 pF @ 10 V	50 pF @ 25 V
Power Dissipation (Max)	830mW (Ta)	370mW (Ta)
Operating Temperature	-65°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Gate Charge(Qg)(Max) @ Vgs	-	0.3 nC @ 4.5 V

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