2N7002,215 vs 2N7002

Dieser detaillierte Vergleich von 2N7002,215 und 2N7002 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002 and 2N7002,215 are functionally equivalent N-channel enhancement-mode MOSFETs sharing the same SOT-23 package, 60 V drain-source voltage rating, and 300 mA continuous drain current capability. The 2N7002,215 is the tape-and-reel orderable variant of the 2N7002 from Nexperia, making it a direct drop-in replacement for automated assembly processes. Designers should verify gate threshold voltage distribution and thermal derating for their specific application before final qualification.

Package Type High match

Drain-Source Voltage Rating High match

Continuous Drain Current High match

Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002,215

Nexperia USA Inc.

Lifecycle: Active
Stock: 6582 Stückzahl
Package: SOT-23-3
Series: Transistoren von FETs, MOSFETs von Single

+Stückliste Anfrage

Part B

2N7002

STMikroelektronik

Lifecycle: Active
Stock: 1470 Stückzahl
Package: SOT-23
Series: Transistoren von FETs, MOSFETs von Single

+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002,215	2N7002
Series	TrenchMOS™	STripFET™
Part Status	Active	Obsolete
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain(Id) @ 25°C	300mA (Ta)	200mA (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	4.5V, 10V
Rds On(Max) @ Id Vgs	5Ohm @ 500mA, 10V	5Ohm @ 500mA, 10V
Vgs(th)(Max) @ Id	2.5V @ 250µA	3V @ 250µA
Vgs(Max)	±30V	±18V
Input Capacitance(Ciss)(Max) @ Vds	50 pF @ 10 V	43 pF @ 25 V
Power Dissipation (Max)	830mW (Ta)	350mW (Tc)
Operating Temperature	-65°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Gate Charge(Qg)(Max) @ Vgs	-	2 nC @ 5 V

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