2N7002,215 vs 2N7002ET1G

Dieser detaillierte Vergleich von 2N7002,215 und 2N7002ET1G bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002,215 are functionally equivalent N-channel enhancement-mode MOSFETs with matching voltage, current, and package ratings, making them suitable drop-in replacements for most low-power switching and level-shifting applications. Designers should verify gate threshold and RDS(on) tolerances against their specific circuit requirements before finalizing the substitution.

Drain-Source Voltage Rating High match

Continuous Drain Current High match

Package Type High match

Static Drain-Source On-Resistance Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002,215

Nexperia USA Inc.

Lifecycle: Active
Stock: 6582 Stückzahl
Package: SOT-23-3
Series: Transistoren von FETs, MOSFETs von Single

+Stückliste Anfrage

Part B

2N7002ET1G

Onsemi

Lifecycle: Active
Stock: 4059 Stückzahl
Package: SOT-23-3
Series: Transistoren von FETs, MOSFETs von Single

+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002,215	2N7002ET1G
Series	TrenchMOS™	-
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain(Id) @ 25°C	300mA (Ta)	260mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	10V	4.5V, 10V
Rds On(Max) @ Id Vgs	5Ohm @ 500mA, 10V	2.5Ohm @ 240mA, 10V
Vgs(th)(Max) @ Id	2.5V @ 250µA	2.5V @ 250µA
Vgs(Max)	±30V	±20V
Input Capacitance(Ciss)(Max) @ Vds	50 pF @ 10 V	26.7 pF @ 25 V
Power Dissipation (Max)	830mW (Ta)	300mW (Tj)
Operating Temperature	-65°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Gate Charge(Qg)(Max) @ Vgs	-	0.81 nC @ 5 V

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