2N7002ET1G vs 2N7002CK

Dieser detaillierte Vergleich von 2N7002ET1G und 2N7002CK bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002CK are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making the 2N7002CK a viable functional substitute for the 2N7002ET1G in most low-power switching applications. Designers should verify gate threshold, on-resistance, and thermal characteristics against their specific circuit requirements before committing to a drop-in replacement.

Drain-Source Voltage Rating High match

Continuous Drain Current High match

Package Type High match

On-Resistance Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002ET1G

Onsemi

Lifecycle: Active
Stock: 4059 Stückzahl
Package: SOT-23-3
Series: Transistoren von FETs, MOSFETs von Single

+Stückliste Anfrage

Part B

2N7002CK

Nexperia USA Inc.

Lifecycle: Active
Stock: 1570 Stückzahl
Package: SOT-23-3
Series: Transistoren von FETs, MOSFETs von Single

+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002ET1G	2N7002CK
Part Status	Active	Active
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	60 V	-
Current - Continuous Drain(Id) @ 25°C	260mA (Ta)	-
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V	-
Rds On(Max) @ Id Vgs	2.5Ohm @ 240mA, 10V	-
Vgs(th)(Max) @ Id	2.5V @ 250µA	-
Gate Charge(Qg)(Max) @ Vgs	0.81 nC @ 5 V	-
Vgs(Max)	±20V	-
Input Capacitance(Ciss)(Max) @ Vds	26.7 pF @ 25 V	-
Power Dissipation (Max)	300mW (Tj)	-
Operating Temperature	-55°C ~ 150°C (TJ)	-
Mounting Type	Surface Mount	-

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