2N7002ET1G vs 2N7002E-T1-E3

Dieser detaillierte Vergleich von 2N7002ET1G und 2N7002E-T1-E3 bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002E-T1-E3 are functionally equivalent N-channel small-signal MOSFETs sharing the same SOT-23 package, 60 V drain-source voltage rating, and 300 mA continuous drain current capability. Both parts are suitable for low-side switching, level shifting, and small-signal amplification applications. Designers may treat them as interchangeable in most circuits, though final validation against the specific manufacturer datasheet is recommended to confirm gate threshold, on-resistance, and thermal characteristics for the target application.

Package Type High match
Drain-Source Voltage Rating High match
Continuous Drain Current High match
On-Resistance and Gate Threshold Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002ET1G

Onsemi

Lifecycle
Active
Stock
4059 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage
Part B

2N7002E-T1-E3

Vishay Siliconix

Lifecycle
Active
Stock
7566 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single
+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002ET1G 2N7002E-T1-E3
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 260mA (Ta) 240mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 2.5Ohm @ 240mA, 10V 3Ohm @ 250mA, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 0.81 nC @ 5 V 0.6 nC @ 4.5 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 26.7 pF @ 25 V 21 pF @ 5 V
Power Dissipation (Max) 300mW (Tj) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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