2N7002K-7 vs 2N7002ET1G

Dieser detaillierte Vergleich von 2N7002K-7 und 2N7002ET1G bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002ET1G and 2N7002K-7 are both N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable voltage and current ratings, making them viable functional substitutes in most low-power switching applications. However, designers should verify gate threshold voltage tolerances and RDS(on) characteristics against specific circuit requirements before committing to a drop-in replacement.

Drain-Source Voltage Rating High match

Continuous Drain Current High match

Package Type High match

Gate Threshold Voltage Validation required

Review the critical differences →

Parts at a glance

Part A

2N7002K-7

Dioden Incorporated

Lifecycle: Active
Stock: 5630 Stückzahl
Package: SOT-23-3
Series: Transistoren von FETs, MOSFETs von Single

+Stückliste Anfrage

Part B

2N7002ET1G

Onsemi

Lifecycle: Active
Stock: 4059 Stückzahl
Package: SOT-23-3
Series: Transistoren von FETs, MOSFETs von Single

+Stückliste Anfrage

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	2N7002K-7	2N7002ET1G
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain(Id) @ 25°C	380mA (Ta)	260mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	5V, 10V	4.5V, 10V
Rds On(Max) @ Id Vgs	2Ohm @ 500mA, 10V	2.5Ohm @ 240mA, 10V
Vgs(th)(Max) @ Id	2.5V @ 1mA	2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	0.3 nC @ 4.5 V	0.81 nC @ 5 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	50 pF @ 25 V	26.7 pF @ 25 V
Power Dissipation (Max)	370mW (Ta)	300mW (Tj)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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