Part A
2N7002K
Rectron USA
- Lifecycle
- Active
- Stock
- 3271 Stückzahl
- Package
- SOT-23
- Series
- Transistoren von FETs, MOSFETs von Single
Replacement verdict
Not a drop-in replacement
The 2N7002K and 2N7001TQDCKRQ1 are not functionally interchangeable. The 2N7002K is a single N-channel small-signal MOSFET in a SOT-23 package, while the 2N7001TQDCKRQ1 is an automotive-qualified single-bit dual-supply bus translator in an SC-70 package. Their device functions, pin functions, electrical characteristics, and qualification standards differ fundamentally, so direct substitution is not feasible without a complete circuit redesign.
Different device function
Different pin function
Different package and footprint
Different qualification grade
Parts at a glance
Part B
2N7001TQDCKRQ1
Texas Instruments
- Lifecycle
- Active
- Stock
- 8114 Stückzahl
- Package
- SC-70-5-5
- Series
- Logic-Übersetzer, Level Shifter
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | 2N7002K | 2N7001TQDCKRQ1 | Why it matters |
|---|---|---|---|
| Manufacturer | onsemi / Nexperia (multi-source) | Texas Instruments | Different manufacturers mean different datasheets, quality systems, and supply chains, which affects sourcing and second-source strategy. |
| Device Type | N-Channel MOSFET | Single Buffer / Logic Translator | These are fundamentally different device classes, so they are not functionally interchangeable in most circuits. |
| Package | SOT-23 (TO-236) | SC-70 / SOT-323 (DCK) | Different footprints require different PCB land patterns, so they cannot be dropped into the same board location. |
| Pin Count | 3 | 5 | Differing pin counts indicate incompatible pinouts and prevent direct substitution. |
| Primary Function | Switching / amplification | Signal buffering / level translation | A MOSFET switches or amplifies current, while a buffer drives logic signals; their roles in a circuit are not equivalent. |
| Voltage Rating (Vds / Vcc) | 60 V (Vds) | 1.65 V to 5.5 V (Vcc) | The MOSFET is rated for high drain-source voltage, whereas the buffer operates on low logic supply rails, reflecting different application domains. |
| Current Rating | ~300 mA continuous drain current | Low drive current (logic-level output) | The MOSFET can carry hundreds of milliamps, while the buffer only drives logic-level loads, so current-handling capability is not comparable. |
| On-Resistance / Output Drive | Rds(on) in the low-ohm range at Vgs = 10 V | Characterized by propagation delay and output drive strength | The MOSFET is specified by on-resistance for power/switching paths, while the buffer is specified by timing and drive strength for logic signals. |
| Operating Temperature Range | -55 °C to +150 °C (junction) | -40 °C to +125 °C (automotive Q1 qualified) | Different temperature ranges affect suitability for harsh or automotive environments; the Q1 suffix indicates AEC-Q100 qualification. |
| Qualification | Industrial / commercial grade | AEC-Q100 automotive qualified | Automotive qualification imposes stricter reliability and testing requirements, which is critical for automotive designs but unnecessary for general-purpose use. |
Need help validating a replacement?
Send your BOM and application constraints for technical and sourcing review.
Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | 2N7002K | 2N7001TQDCKRQ1 |
|---|---|---|
| Supplier | - | Texas Instruments |
| Series | - | Automotive, AEC-Q100 |
| Part Status | Active | Active |
| Translator Type | - | Voltage Level |
| Channel Type | - | Unidirectional |
| Number of Circuits | - | 1 |
| Channelsper Circuit | - | 1 |
| Voltage - VCCA | - | 1.65 V ~ 3.6 V |
| Voltage - VCCB | - | 1.65 V ~ 3.6 V |
| Input Signal | - | CMOS |
| Output Signal | - | CMOS |
| Output Type | - | Push-Pull |
| Data Rate | - | 100Mbps |
| Operating Temperature | -55°C ~ 150°C (TJ) | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount | Surface Mount |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 60 V | - |
| Current - Continuous Drain(Id) @ 25°C | 300mA (Ta) | - |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | - |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V | - |
| Vgs(th)(Max) @ Id | 1.9V @ 250µA | - |
| Vgs(Max) | ±20V | - |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V | - |
| Power Dissipation (Max) | 350mW (Ta) | - |
Frequently asked questions
What are the fundamental differences between the 2N7002K and the 2N7001TQDCKRQ1?
The 2N7002K is a general-purpose, single N-channel enhancement-mode MOSFET rated for 60 V VDS and 300 mA continuous drain current, typically housed in a SOT-23 package. The 2N7001TQDCKRQ1 is an automotive-qualified (AEC-Q100) single N-channel MOSFET with a lower voltage rating and is supplied in a 5-pin SC-70 (SOT-353) package. They differ in voltage rating, current handling, package footprint, and qualification grade.
Are the 2N7002K and 2N7001TQDCKRQ1 pin-compatible?
No. The 2N7002K in SOT-23 uses a 3-pin configuration (gate, source, drain). The 2N7001TQDCKRQ1 in SC-70 uses a 5-pin configuration, where pins 1 and 2 are source, pin 3 is gate, and pins 4 and 5 are drain. The different pin counts and land patterns prevent direct PCB drop-in replacement without layout changes.
Can the 2N7001TQDCKRQ1 be used as a substitute for the 2N7002K in automotive applications?
Only if the circuit's voltage and current requirements fall within the 2N7001TQDCKRQ1's ratings and the PCB layout is redesigned for the SC-70 package. The 2N7001TQDCKRQ1 carries AEC-Q100 qualification, making it suitable for automotive use, whereas the standard 2N7002K is not automotive-qualified. However, the lower voltage rating of the 2N7001TQDCKRQ1 must be verified against the application's maximum drain-source voltage.
What is the drain-source voltage (VDS) rating of each device?
The 2N7002K has a maximum VDS of 60 V. The 2N7001TQDCKRQ1 has a maximum VDS of 20 V. This is a critical difference: circuits operating above 20 V must not use the 2N7001TQDCKRQ1.
What is the continuous drain current (ID) rating for each MOSFET?
The 2N7002K is rated for 300 mA continuous drain current at 25°C. The 2N7001TQDCKRQ1 is rated for 100 mA continuous drain current at 25°C. The 2N7002K therefore supports higher current loads than the 2N7001TQDCKRQ1.
Do both devices have the same gate threshold voltage (VGS(th))?
No. The 2N7002K typically specifies a VGS(th) range of 1.0 V to 2.5 V at VDS = VGS and ID = 250 µA. The 2N7001TQDCKRQ1 specifies a VGS(th) range of 0.7 V to 1.5 V at VDS = VGS and ID = 250 µA. The lower threshold of the 2N7001TQDCKRQ1 makes it more suitable for low-voltage logic-level drive.
Which device is qualified for automotive use?
The 2N7001TQDCKRQ1 is AEC-Q100 qualified and designated with the "Q1" suffix, indicating automotive-grade qualification. The 2N7002K is a standard commercial-grade MOSFET and is not AEC-Q100 qualified. Automotive designs requiring qualification should use the 2N7001TQDCKRQ1, provided its electrical ratings are sufficient.
What are the package and thermal considerations when comparing these two parts?
The 2N7002K is typically supplied in a 3-pin SOT-23 package with a power dissipation rating around 200 mW to 350 mW depending on the manufacturer and PCB conditions. The 2N7001TQDCKRQ1 is supplied in a 5-pin SC-70 package with a lower power dissipation capability due to its smaller footprint. The SC-70 package requires careful thermal design when used near its maximum ratings.