2N7002K-7
Dioden Incorporated
- Lifecycle
- Active
- Stock
- 5630 Stückzahl
- Package
- SOT-23-3
- Series
- Transistoren von FETs, MOSFETs von Single
Dieser detaillierte Vergleich von 2N7002K-7 und 2N7002K bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.
Replacement verdict
The 2N7002K and 2N7002K-7 are functionally equivalent N-channel MOSFETs sharing identical electrical characteristics, package type, and pinout. The 2N7002K-7 represents a tape-and-reel packaging variant of the same device, making it a direct drop-in replacement for automated assembly processes.
Send your BOM and application constraints for technical and sourcing review.
Use manufacturer datasheets as the final authority.
| Specification | 2N7002K-7 | 2N7002K |
|---|---|---|
| Part Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 380mA (Ta) | 300mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V, 10V | 5V, 10V |
| Rds On(Max) @ Id Vgs | 2Ohm @ 500mA, 10V | 2Ohm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 1mA | 1.9V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.3 nC @ 4.5 V | - |
| Vgs(Max) | ±20V | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 50 pF @ 25 V | 50 pF @ 25 V |
| Power Dissipation (Max) | 370mW (Ta) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |