2N7002K vs 2N7002CK

Dieser detaillierte Vergleich von 2N7002K und 2N7002CK bietet wertvolle Einblicke in deren Spezifikationen und Hauptmerkmale. Wir gehen ausführlich auf wichtige Faktoren ein, darunter RoHS-Konformität, REACH-Status, Serie, Montageart, Gehäusetyp und weitere relevante Eigenschaften. Die übersichtliche Darstellung der Unterschiede vereinfacht die Komponentenauswahl und erleichtert Ihnen die Wahl der optimalen Lösung für Ihre Anwendung.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002K and 2N7002CK are functionally compatible N-channel MOSFETs with matching voltage, current, and package characteristics, making the 2N7002CK a viable replacement candidate for the 2N7002K in most low-power switching applications. Designers should verify gate threshold and RDS(on) tolerances against their specific circuit requirements before committing to a drop-in substitution.

Drain-Source Voltage Rating High match
Continuous Drain Current High match
Package Type High match
Static Drain-Source On-Resistance Validation required

Parts at a glance

Part A

2N7002K

Rectron USA

Lifecycle
Active
Stock
3271 Stückzahl
Package
SOT-23
Series
Transistoren von FETs, MOSFETs von Single
Part B

2N7002CK

Nexperia USA Inc.

Lifecycle
Active
Stock
1570 Stückzahl
Package
SOT-23-3
Series
Transistoren von FETs, MOSFETs von Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002K 2N7002CK
Part Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 60 V -
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) -
Drive Voltage(Max Rds On Min Rds On) 5V, 10V -
Rds On(Max) @ Id Vgs 2Ohm @ 500mA, 10V -
Vgs(th)(Max) @ Id 1.9V @ 250µA -
Vgs(Max) ±20V -
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 25 V -
Power Dissipation (Max) 350mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -